VPS0560 Search Results

MARKING 74s

Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

BG3230

Abstract: BG3230R VPS05604
Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

BCR08PN

Abstract: VPS05604
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

BAS40-07W

Contextual Info: BAS40-07W 3 Silicon Schottky Diode 4
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping 2
High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -

BC847PN SOT363

Abstract: VPS05604 BC847PN Marking 1ps sot
Contextual Info: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation

BCR129S

Abstract: VPS05604
Contextual Info: BCR129S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=10k) 2 3 1 C1 B2 E2 6 5 4 VPS05604

BCR169S

Abstract: VPS05604 marking WSs
Contextual Info: BCR169S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2

marking code g1s

Abstract: Q62702-F1774 SOT 343 MARKING BF
Contextual Info: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

BAT68-07W

Contextual Info: BAT68-07W Silicon Schottky Diodes 3
For mixer applications in the VHF / UHF range 4
For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s

Silicon N Channel MOSFET Tetrode

Abstract: Q62702-F1772 marking code g1s BF 2000W
Contextual Info: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration

BCR198S

Abstract: VPS05604
Contextual Info: BCR198S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604

Contextual Info: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05604

Abstract: WFs transistor
Contextual Info: BCR 08PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) 2 1 VPS05604

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

ZL 58

Contextual Info: BFP 183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFP 136W NPN Silicon RF Transistor 3
For power amplifier in DECT and PCN systems 4
fT = 5.5GHz
Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration

Contextual Info: BF 2030W Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP620

Abstract: BFP620 acs BFP620 applications note GFT45
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

IC 7481 pin configuration

Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

BFS483

Abstract: G1410 VPS05604
Contextual Info: BFS483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2

wgs-1

Abstract: BCR116S VPS05604
Contextual Info: BCR116S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k, R 2=47k) 2 3 1 VPS05604

BF2030W

Contextual Info: BF2030W Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!