SM-38 TRANSISTOR Search Results

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

TO-18 amps pnp transistor

Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
Contextual Info: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251

B W4 Transistor

Abstract: transistor hemt TRANSISTOR W2 Stanford Microdevices 4 ghz
Contextual Info: Product Description SMW Series Stanford Microdevices’ SMW Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in thermally-efficient ceramic packages. These HEMT MMICs are fabricated using molecular beam epitaxial growth

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

smd N fet

Abstract: top-tech fet P CHANNEL
Contextual Info: Table of Contents Inhaltsverzeichnis Page Seite SIPMOS -Kleinsignal-Transistoren Bedrahtete Bauformen . 2 - N-Kanal-Anreicherungstypen . 2 - P-Kanal-Anreicherungstypen. 2

AT-41435

Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
Contextual Info: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

bpw 81 t

Abstract: SFH213 sfh 206 BP 104 FAS
Contextual Info: S i -F o t o d e t e k t o r e n S il ic o n P h o t o d e t e c t o r s T y p e n ü b e r s ic h t S ummary 1. 1. Foto IC für Fernsteuerung SFH 5110 2. SFH 5410 Fotodetektoren in SM T T ypes Photo IC for Remote Control SFH 5111 2. 2.1.SM T-Transistoren

Contextual Info: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth

Contextual Info: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth

2n1711 complement

Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86
Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,

CL1501

Abstract: 2SC4154
Contextual Info: M ITSUBISHI SEMICONDUCTOR <SM ALL-SIGNAL TRANSISTO R 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4154 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING type transistor. It is designed for low frequency voltage amplify application.

2N5764

Abstract: 2N6764 25C31 2N6164 2N6763
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2n5764

Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

tis99

Abstract: tis94 texas instruments tis97 TIS96 TIS98 TIS95 s7310 4518T EO65
Contextual Info: TYPES TIS94 THRU TIS99 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 731 0 1 8 7 , J U N E 1 9 6 7 - R E V IS E D M A R C H 1973 A C O M P LET E F A M IL Y OF LOW-NOISE, LOW- TO M E D IU M -C U R R E N T S IL E C T t T R A N S IS T O R S * FOR U SE IN Ht-FI A U D IO A M P L IF IE R S A N D

schematic diagram CORDLESS DRILL

Abstract: MC2833P low power fm transmitter .47 uH MC2833 MC2833 ic Low power FM transmitter system M1175-A MC2833D M1175A
Contextual Info: Order this document by MC2833/D MC2833 Low Power FM Transmitter System LOW POWER FM TRANSMITTER SYSTEM MC2833 is a one–chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxiliary transistors.

MC2833 ic

Abstract: MC2833P schematic diagram CORDLESS DRILL MC2833 MC2833D M1312 circuit diagram of 27 mhz transmitter 16 pin ic mc2833 application "Frequency Tripler" circuit diagram of fm transmitter
Contextual Info: Order this document by MC2833/D MC2833 Low Power FM Transmitter System MC2833 is a one–chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxiliary transistors.

Contextual Info: SANYO SEMICONDUCTOR CORP 55E 7cìeì707b O O O b á ñ 11 a D T - 31-15 2SC4407 NPN Epitaxial Planar Silico n Transistor 2059 VHF/UHF MIX, OSC Applications 2760 Applications • V H F/U H F m ixers, frequency converters, local oscillators Features f r = 3.0GHz typ

Contextual Info: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ

BAS 40 relia

Contextual Info: H M y / r # / C « * »« r n. a u . ! r O S G / 7 7 l B B J B S B B a 1 4 0 C o m m e r c e D r iv e M o n t g o m e r y v ilie , P A 1 8 9 3 6 -1 0 1 3 T e l: 2 1 5 6 3 1 -9 8 4 0 S D 1 8 6 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS

Contextual Info: M M O T O R O LA ' M C 2833 Low Pow er FM T ran sm itter System M C 2833 is a o n e -c h ip FM tra n sm itte r subsystem designed for cordless telephone and FM co m m unication equipm ent. It includes a m icrophone a m ­ plifier, voltage controlled oscillator and two auxiliary transistors.

Contextual Info: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSU E 1 - MARCH 94_ FEATU RES * 6 0 V olt V,CEO G a in o f 1 0 K at lc=0.5 A m p Ptot=1 W att ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M BO L Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases