SLN176 Search Results

AS 15 -g

Contextual Info: SLN-176 DC-S.OGHz Low Noise Amplifier Preliminary Data April, 1996 Features 76 Package - Patented G aA s H B T T e c h n o lo g y - Low N oise F igure: 1.5 d B N fo p t at 1.5 G H z - H igh A s so cia te d G a in: 2 7 d B T y p ic a l at 2 G H z - C a sca d a b le 5 0 O h m -1 .5 :1 VSW R Typ

SNA-486

Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
Contextual Info: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z

Contextual Info: Stanford Microdevices Product Description SLN-176 Stanford M icrodevices’ SLN-176 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is used for broadband perfor­

2800N

Contextual Info: Stanford Microdevices Product Description SLN-176 Stanford M icrodevices’ SLN-176 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is used for broadband perfor­

SLN-176

Abstract: TRANSISTOR j001 1300 SLN176
Contextual Info: IP Stamford M fc ro d e w e e i Product Description SLN-176 Stanford M icrodevices’ SLN-176 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is used for broadband perfor­