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    SL30B60K Search Results

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    SL30B60K Price and Stock

    Rochester Electronics LLC AUIRGSL30B60K

    AUIRGSL30B60K - AUTOMOTIVE IGBT
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    DigiKey AUIRGSL30B60K Bulk 7,200 128
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    AUIRGSL30B60K Bulk 150 150
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    Rochester Electronics LLC IRGSL30B60KPBF

    IGBT NPT 600V 78A TO-262
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    DigiKey IRGSL30B60KPBF Bulk 2,382 229
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    Infineon Technologies AG AUIRGSL30B60K

    IGBT NPT 600V 78A TO-262
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    Rochester Electronics AUIRGSL30B60K 1,150 1
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    EBV Elektronik AUIRGSL30B60K 143 Weeks 50
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    Infineon Technologies AG IRGSL30B60KPBF

    IGBT NPT 600V 78A TO-262
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    EBV Elektronik IRGSL30B60KPBF 143 Weeks 1,000
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    International Rectifier IRGSL30B60KPBF

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    Bristol Electronics IRGSL30B60KPBF 950
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    Rochester Electronics IRGSL30B60KPBF 2,382 1
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    ComSIT USA IRGSL30B60KPBF 5,300
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    SL30B60K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    irf 1830

    Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB PDF

    AN-994

    Abstract: C-150 IRGSL30B60K
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB AN-994 C-150 IRGSL30B60K PDF

    SL30B60K

    Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3
    Text: PD - 94741 IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.


    Original     		IRGS30B60K IRGSL30B60K O-262 AN-994. SL30B60K C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


    Original     		AUIRGS30B60K AUIRGSL30B60K O-262 AUIRGSL30B60Knsible PDF

    irf 1830

    Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799 IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994. irf 1830 C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K PDF

    IGBT 4000V

    Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V
    Text: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K SL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


    Original     		AUIRGS30B60K AUIRGSL30B60K O-262 IGBT 4000V AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 O-220AB AN-994. PDF

    AN-994

    Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K PDF