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    SKM150GB12T4 Search Results

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    SKM150GB12T4 Price and Stock

    SEMIKRON SKM150GB12T4

    Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM150GB12T4
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    Newark SKM150GB12T4 Bulk 24 1
    • 1 $204.18
    • 10 $183.77
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    SKM150GB12T4 Bulk 1
    • 1 $204.18
    • 10 $183.77
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    RS SKM150GB12T4 Bulk 1
    • 1 $196.33
    • 10 $176.7
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    Richardson RFPD SKM150GB12T4 1
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    Vyrian SKM150GB12T4 39
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    SEMIKRON SKM150GB12T4G

    Igbt Array & Module Transistor, Dual N Channel, 223 A, 1.85 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM150GB12T4G
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    Newark SKM150GB12T4G Bulk 1
    • 1 $223.41
    • 10 $198.84
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    TME SKM150GB12T4G 1
    • 1 $191.84
    • 10 $153.89
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    Richardson RFPD SKM150GB12T4G 1
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    SEMIKRON SKM150GB12T4G (22892050)

    SEMITRANS; 1200V; 200A | SEMIKRON SKM150GB12T4G
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    RS SKM150GB12T4G (22892050) Bulk 1
    • 1 $214.82
    • 10 $191.19
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    SEMIKRON SKM150GB12T4 22892040

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
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    TME SKM150GB12T4 22892040 20 1
    • 1 $124.13
    • 10 $102.59
    • 100 $102.59
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    SEMIKRON SKM150GB12T4GW

    POWER IGBT TRANSISTOR
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    Richardson RFPD SKM150GB12T4GW 1
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    SKM150GB12T4 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKM150GB12T4 Semikron IGBT4 Modules Original PDF
    SKM150GB12T4G Semikron IGBT4 Modules Original PDF

    SKM150GB12T4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SKM150GB12T4G PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		SKM150GB12T4G PDF

    SKM150GB12T4

    Abstract: 13mJ SKM150
    Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189


    Original     		SKM150GB12T4 SKM150GB12T4 13mJ SKM150 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		SKM150GB12T4 SKM150GB12T4 E63532 PDF

    SKM150GB12T4

    Abstract: Semitrans* IGBT
    Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189


    Original     		SKM150GB12T4 SKM150GB12T4 Semitrans* IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		SKM150GB12T4 PDF

    SKM150GB12T4G

    Abstract: Diode semikron 103
    Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SKM150GB12T4G App2009 SKM150GB12T4G Diode semikron 103 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		SKM150GB12T4 PDF

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c PDF