SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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Untitled
Abstract: No abstract text available
Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V
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skm 75 gb 101 d
Abstract: skm 100 gb 121d skm 75 gb 101d SK 50 GAL 065 75GB101D SK 200 GAR 125 skm 75 101 SEMIKRON SKM 22 GAL 121D
Text: s e MIKRDN Absolute Maximum Ratings Symbol Conditions 1 VcES VcGR lc ICM V ges Rge = 20 kQ Tease — 25/80 °C Tease = 25/80 °C Ptot Tj, Tstg V ¡so! humidity climate Values . 101 D 1000 1000 . 121 D Units 1200 1200 V V A A V I 75/50 150/100 ±20 500
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SKM75
skm 75 gb 101 d
skm 100 gb 121d
skm 75 gb 101d
SK 50 GAL 065
75GB101D
SK 200 GAR 125
skm 75 101
SEMIKRON SKM 22 GAL 121D
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skm 191 mosfet
Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020
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450s1
D15/D45
450A010
180A020
450A020
120B020
240B020
310B020
240M020
310M020
skm 191 mosfet
skm 151 mosfet
SKM 181 R
skm 141 ar
zener DIODE D49
skm 181 mosfet
SKM 200 CIRCUIT
SKM 121 R
semikron skm 191
skm 191
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skm 100 gb 101 d
Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Text: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM
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13bh71
Woff12
WoH2351
skm 100 gb 101 d
skm 100 gb 121d
Si 122D
GAL 16 v 8 D DIP
skm 100 gb 122 d
skm 50 gb 101 d
D4252-1
skm 200 gb 122 d
skm 75 gb 101 d
SEMIKRON SKM 22 GAL 121D
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SEMIKRON SKM 50 GAL 121D
Abstract: skm 50 z skm 75 gb 101 d SK 200 GAR 125 50GB101D skm 22 gal 121 SEMIKRON SKM 22 GAL 121D SEMIKRON SKM 100 GAL 101D
Text: s e M IKRD n Absolute Maximum Ratings Sym bol Values . 101 D Conditions ' 1000 1000 VcES VcGR R g e = 20 k£2 Ic T c a s e = 25/80 °C T c a s e = 25/80 CC ICM per IGBT, T ca se 1200 1200 50/34 100/68 ±20 400 - 5 5 . .+150 2 500 Class F 55/150/56 V ges
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Untitled
Abstract: No abstract text available
Text: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C
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l3bb71
DG03bb5
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700
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SKM 22 GD 101 D
Abstract: SKM 40 GD 101 D SKM 15 GD 100 D SKM 40 GD 121 D FS403 skm 40 gd 121
Text: se MIKRO n Absolute Maximum Ratings Symbol Conditions 1 Values . 101 D I . 121 D 1000 1000 V cES = 20 kQ 1 case = 25/80 °C Tease = 25/80 °C R ge VcGR lc ICM per IGBT, Tease = 25 °C jH — C /5I CQ Visol humidity climate 1200 1200 22/15 44/30 ±20 150
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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Untitled
Abstract: No abstract text available
Text: SIE D • Ö13bb71 DD03b3ö 3flb « S E K G SEMIKRON S E M I K R O N INC Absolute Maximum Ratings Symbol Conditions1 VcES VcGR lc Rge = 20 k f l Values .121 D . 101 D 1000 1000 V ges Ptot T], Tstg Visoi per IGBT, Tease = 25 °C AC, 1 min humidity DIN 40 040
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13bb71
DD03b3Ã
fll3bb71
QGD3b45
T-39-31
SKM22GD101
SKM22GD121
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SKM 40 GD 121 D
Abstract: SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d
Text: 6 0,75$16 ,*%7 0RGXOHV ,QVXODWHG *DWH %LSRODU 7UDQVLVWRU 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 026 LQSXW YROWDJH FRQWUROOHG )UHTXHQF\ FRQYHUWHUV IRU $& PRWRU GULYHV 1 FKDQQHO '& VHUYR DQG URERW GULYHV /RZ VDWXUDWLRQ YROWDJH VHULHV DYDLODEOH
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1371RQ
SKM 40 GD 121 D
SKM 40 GD 101 D
skm 40 gd 121
skm 200 gb 122 d
skm 75 gb 101 d
skm 150 gb 122
SKM 25 GD
IGBT cross reference semikron skm 40 gd 121
SKM 300 GA 102 D
Semitrans M SKm 100 ga 121 d
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions * Values Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 7 5 /5 0 1 5 0 /1 0 0 ±20 390 - 4 0 . . .+150 125 2 500 Class F 40/125/56 Inverse Diode Tcase = 25/80 °C If= - lc Tcase = 25/80 °C; tp = 1 ms
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SKM 40 GD 101 D
Abstract: SKM 22 GD 101 D SKM 40 gdl 123 d b6104 skm 50 gd 123 d
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 75 / 50 150 / 100 ± 20 390 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C
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SEMIKRON SKM 22 GAL 121D
Abstract: SEMIKRON SKM 50 GAL 121D skm 100 gb 121d GE215 40GB101D SK 70 KQ 16 SEMIKRON SKM4 skm 75 101 SEMIKROM SEMIKRON+SKM+22+GAL+121D
Text: s e MIKRD n Absolute Maximum Ratings Symbol C onditions 1 Values VcES R ge = 2 0 kQ T case = 2 5 /8 0 °C T case = 2 5 /8 0 °C VcGR lc ICM 1000 1200 V 1200 V per IG B T , T case = 2 5 °C 8 0 /5 0 A ± 20 V A C , 1 min D IN 4 0 0 4 0 W 300 -5 5 . humidity
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SKM40
SKM40GAR
SEMIKRON SKM 22 GAL 121D
SEMIKRON SKM 50 GAL 121D
skm 100 gb 121d
GE215
40GB101D
SK 70 KQ 16 SEMIKRON
SKM4
skm 75 101
SEMIKROM
SEMIKRON+SKM+22+GAL+121D
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C Pfot Tj, Tstg Vsol AC , 1 min. h u m id ity clim a te DIN 40 040 DIN IEC 68 T.1
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CASED68
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skm 200 gb 122 d
Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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F42A
Abstract: No abstract text available
Text: S EM IK R O N V r sm Ifrm s m a xim u m v a lu e fo r continuous operation V r rm 120 A Ifa v (sin. 1 80 ; T case = 8 5 °C ; 5 0 Hz) V 42 A 1000 S K K D 42 F 10 S K M D 4 2 F 10 SK N D 4 2 F 10 1200 S K K D 42 F 12 S K M D 4 2 F 12 SK N D 4 2 F 12 1400
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SKM 40 GD 101 D
Abstract: SKM 22 GD 101 D 123 DL
Text: s e MIKRO n Absolute Maximum Ratings V a lu e s Symbol Conditions VcES VcGR lc ICM Vqes Rge = 20 kQ Teas ~ 25/80 °C Tease = 25/80 "C; tp — 1 ms P lo t per IGBT, T « , T„ Tag V«„ humidity climate AC, 1 min. DIN 40 040 DIN 1EC68T.1 1200 1200 2 5 /1 5
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1EC68T
SKM22GD123
SKM 40 GD 101 D
SKM 22 GD 101 D
123 DL
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400V igbt dc to dc buck converter
Abstract: semikron gd-11 semikube semikron IGBT skm 200 gb 128d dc to ac PURE SINE WAVE inverter assembly code SKM300GB128D B6CI Semikube SKM400GB128D working principle of an inverter semikron gd-11 interface
Text: Application Note AN-8003 Key Words: cooling, capacitor, driver, IGBT, Input bridge rectifier, selection, SEMISTACK Revision: 00 Issue Date: 2008-05-27 Prepared by: Frederic Sargos SEMIKUBE selection guide 1. 1.1. 1.2. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7.
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AN-8003
400V igbt dc to dc buck converter
semikron gd-11 semikube
semikron IGBT skm 200 gb 128d
dc to ac PURE SINE WAVE inverter assembly code
SKM300GB128D
B6CI
Semikube
SKM400GB128D
working principle of an inverter
semikron gd-11 interface
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VQE 23D
Abstract: 6tv0 skm 40 gb 123 d
Text: se MIKROn Absolute Maximum Ratings Sym bol C onditions ' V ce S Vcon lc Icm V qes R ge - 20 kQ Tease = 25/80 C Tease = 25/80 “C; tp — 1 ms Plot Tj, Tstg Visot humidity climate per IG BT , Tease = 25 °C AC, 1 min. DIN 4 0 0 4 0 DIN I E C 6 6 T . 1 Inverse Diode
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