2SA2140
Abstract: 2SA214
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C
|
Original
|
2002/95/EC)
2SA2140
O-220D-A1
2SA2140
2SA214
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C
|
Original
|
2002/95/EC)
2SA2140
|
PDF
|
SJD00316AED
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter
|
Original
|
2002/95/EC)
2SA2140
SJD00316AED
|
PDF
|
2SA2140
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE
|
Original
|
2002/95/EC)
2SA2140
2SA2140
|
PDF
|
2SA2140
Abstract: 2SA21
Text: Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO
|
Original
|
2SA2140
2SA2140
2SA21
|
PDF
|