Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIRA34DP Search Results

    SF Impression Pixel

    SIRA34DP Price and Stock

    Vishay Siliconix SIRA34DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA34DP-T1-GE3 Digi-Reel 1
    • 1 $0.44
    • 10 $0.44
    • 100 $0.44
    • 1000 $0.44
    • 10000 $0.44
    Buy Now
    SIRA34DP-T1-GE3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    SIRA34DP-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    SIRA34DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA34DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 8SOIC Original PDF

    SIRA34DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET


    Original
    PDF SiRA34DP SiRA34DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET


    Original
    PDF SiRA34DP SiRA34DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original
    PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original
    PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs