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    SILICONIX MOS FET Search Results

    SILICONIX MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    SILICONIX MOS FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CDB 450

    Contextual Info: designed for . 3 Siliconix G il5 Monolithic 6-Channel Enhancement-Type MOS FET Switch BENEFITS Reduces External Component Requirements • Switching Analog Signals o Internal Zener Diode Protects the Gate o Six Switches Per Chip o Integrated MOS FET fo r Each Gate to


    OCR Scan     		PDF

    123AP

    Contextual Info: designed for . . . Siliconix G123 H M onolithic 4-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals Reduces External C om ponent Requirements Internal Zener Diode Protects the Gate Four Switches Per Chip ■ M ultiplexing Intergrated MOS FET fo r Each Gate to


    OCR Scan     		PDF

    SMP25N06

    Abstract: 1811PA250-3C8 1811PL00 1N4148 1N5822 AN703 Si9110 Si9111 TL431C toroidal transformer 120v
    Contextual Info: AN703 Siliconix Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and batteryĆpowered equipment, the advantages of MOS over bipolar technology for pulseĆwidth modulation PWM controllers are significant.


    Original     		AN703 Si9110 2pR9C10) R11/R10) SMP25N06 1811PA250-3C8 1811PL00 1N4148 1N5822 AN703 Si9111 TL431C toroidal transformer 120v PDF

    Siliconix mos fet

    Abstract: fiat G117 G117AL
    Contextual Info: designed fo r . • . s Siliconix Gl 17 Monolithic 5-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals ■ M ultiplexing w ith Enable Switch Reduces External Component Requirements ' o Internal Zener Diode Protects the Gate o Five Switches Per Chip


    OCR Scan     		G117AL. Siliconix mos fet fiat G117 G117AL PDF

    IC TL431c opto

    Abstract: 1811PL00 SMP25N06 Si9110 wound bifilar SMP25N A1m anode AN703 Si9111 IC TL431c 12v
    Contextual Info: AN703 Vishay Siliconix AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulsewidth modulation PWM controllers are significant. First, by


    Original     		AN703 Si9110 R11/R10) IC TL431c opto 1811PL00 SMP25N06 wound bifilar SMP25N A1m anode AN703 Si9111 IC TL431c 12v PDF

    G115

    Abstract: G116 G116AL G116AP
    Contextual Info: designed for . . . s Siliconix G II6 M onolithic 5-Channel Enhancement-Type MOS FET Switch BENEEFITS Reduces External Component Requirements • Switching A n alo g Signals Internal Zener D iode Protects the Gate Five Switches Per C hip ■ M u ltip le x in g


    OCR Scan     		PDF

    G122

    Abstract: G122AL
    Contextual Info: designed for . . . S Siliconix G122 Monolithic 4-Channel Enhancement-Type MOS FET Switch B E N E FIT S • Switching A nalog Signals such as D ifferential Inputs M ultiplexing Reduces E xternal C om ponent Requirem ents o o Internal Zener Diode Protects the Gate


    OCR Scan     		PDF

    D129AP

    Abstract: d129 D129BP G123
    Contextual Info: designed for . sr D129 4-Channel MOS FET Switch Driver with Decode Siliconix BENEFITS Ilnterfacing Low Level Signals to FET Switches such as G i l 5 and G123 Series M u lti-C h an n el FET Switches • Reduces System C om pon en t Requirem ents o Four Interface Circuits in One Chip


    OCR Scan     		200/jA D129AP d129 D129BP G123 PDF

    schematic diagram UPS

    Abstract: FET P-Channel Switch G124 G124AL gatedriver
    Contextual Info: designed for . . . s Siliconix G l 24 Monolithic 4-Channel Enhancement-Type MOS FET Switch BENEFITS Reduces External Component Requirements • Sw itching A n alo g Signals ■ M u ltip le x in g o In te rn a l Z e n e r D io d e P ro te c ts th e G ate o


    OCR Scan     		G124AL schematic diagram UPS FET P-Channel Switch G124 gatedriver PDF

    G115

    Abstract: G115AP G115B G115BP
    Contextual Info: designed fo r . Gl 15 s M onolithic 6-Channel Enhancem ent-Type MOS FET Switch Siliconix BENEFITS R educes Extern al C om ponent Requirem ents • Sw itching A nalo g Signals In te rn a l Z e n e r D io d e P ro te cts th e Gate S ix S w itc h e s Per C hip


    OCR Scan     		V01TS> G115 G115AP G115B G115BP PDF

    SD5000N

    Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
    Contextual Info: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.


    OCR Scan     		SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY AN301, SD5001 sd5001 siliconix sd5400 aros SD5000 SILICONIX SD5000 PDF

    fet cross reference

    Abstract: 2N4302 2N4381 2N4393 JFET 2N5457 2N3B19 JFET 2N6568 2N4303 2n4416 jfet
    Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET


    OCR Scan     		2N3909 2N4340 2N4340 2N3909A 2N3909 2N4341 2N4341 2N3921 2N3921 2N4352 fet cross reference 2N4302 2N4381 2N4393 JFET 2N5457 2N3B19 JFET 2N6568 2N4303 2n4416 jfet PDF

    SILICONIX SD21

    Abstract: ST211 sst211 sot-143 SST211 SD 214DE siliconix SST213 213D to253 SST215 SILICONIX CD+Laser+pickup+kss+213D
    Contextual Info: T e m ic SD211DE/SST211 Series Siliconix N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary P a rt N u m b er V br DS M in (V) VGS(th) M ax (V) «•DS(on) M ax (Q ) e « « M a x (p F ) toN M a x (n s) SD211DE 30 1.5


    OCR Scan     		SD211DE/SST211 SD211DE SD213DE SD215DE SST211 SST213 SST215 SILICONIX SD21 ST211 sst211 sot-143 SD 214DE siliconix 213D to253 SST215 SILICONIX CD+Laser+pickup+kss+213D PDF

    D214D

    Contextual Info: Tem ic srnççmx_ SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary P a r t N u m b er V br Ds M i» (V) VGS(th) M a* (V) ri)S(on) M ax (Q ) p r ss M ax (p F ) toN M ax (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE


    OCR Scan     		SD210DE/214DE SD210DE SD214DE SD214DE, AN301, Sample-and-H5/94) SD210DE/214DE P-37406-- D214D PDF

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet PDF

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor PDF

    FET pair n-channel p-channel

    Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
    Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.


    Original     		AN804 10-Mar-97 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L PDF

    JFET

    Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
    Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET


    OCR Scan     		2N3909 2N4340 2N4340 2N3909A 2N3909 2N4341 2N4341 2N3921 2N3921 2N4352 JFET J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 PDF

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Contextual Info: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF

    FET pair n-channel p-channel

    Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
    Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to


    Original     		AN804 21-Jun-94 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent PDF

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Contextual Info: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY PDF

    p channel depletion mosfet

    Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
    Contextual Info: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the


    Original     		AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets PDF

    DF412

    Abstract: DF320 DF320A SILICONIX df412 D125 D129 D169 DF322 DF328 dual MOS ANALOG SWITCHES
    Contextual Info: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125


    OCR Scan     		DF320A DF320, 500ms DF322 DF328 16-lead DF412 40-pin DF320 DF320A SILICONIX df412 D125 D129 D169 DF322 dual MOS ANALOG SWITCHES PDF