SILICONIX FET DESIGN Search Results

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

TRANSISTOR D123

Contextual Info: Dl 23 M onolithic 6-Channel FET Switch Drivers designed for . . • JJ Siliconix BENEFITS Interfacing Low Level Signals to FET Switches such as G i l 5 and G122 Series Multi-Channel FET Switches • Reduces System C om ponent Requirements o Six Interface Circuits on One Chip

siliconix FET DESIGN

Abstract: Siliconix FET Siliconix "fet" 2N4340 2N4341 2N4869 high impedance current sources -rs siliconix DESIGN idea high voltage constant current source Siliconix design
Contextual Info: DI71-1 H Siliconix DESIGN IDEA The FET Constant Current Source INTRODUCTION The combination of low associated operating voltage and high output impedance make the FET attractive as a con­ stant current source. An adjustable current source may be built with a FET, a variable resistor and a small battery,

siliconix - j201

Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
Contextual Info: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,

D129AP

Abstract: d129 D129BP G123
Contextual Info: designed for . sr D129 4-Channel MOS FET Switch Driver with Decode Siliconix BENEFITS Ilnterfacing Low Level Signals to FET Switches such as G i l 5 and G123 Series M u lti-C h an n el FET Switches • Reduces System C om pon en t Requirem ents o Four Interface Circuits in One Chip

CDB 450

Contextual Info: designed for . 3 Siliconix G il5 Monolithic 6-Channel Enhancement-Type MOS FET Switch BENEFITS Reduces External Component Requirements • Switching Analog Signals o Internal Zener Diode Protects the Gate o Six Switches Per Chip o Integrated MOS FET fo r Each Gate to

123AP

Contextual Info: designed for . . . Siliconix G123 H M onolithic 4-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals Reduces External C om ponent Requirements Internal Zener Diode Protects the Gate Four Switches Per Chip ■ M ultiplexing Intergrated MOS FET fo r Each Gate to

TRANSISTOR D123

Abstract: D123BP in60 D123 D123AL D123AP G122
Contextual Info: designed for . . . B Siliconix D123 Monolithic 6-Channel FET Switch Drivers BENIEFITS llnterfacing Low Level Signals to IFET Switches such as G I I 5 and G122 Series Multi-Channel FET Switches • Reduces System C om ponent Requirements o Six Interface C ircuits on One Chip

TRANSISTOR D123

Abstract: IN60 D123 D123AL D123AP D123BP G122
Contextual Info: D123 Monolithic 6-Channel FET Switch D rivers designed fo r . JJ Siliconix BENEFITS • In terfacin g Low Level Signals to FET Sw itches such as G 115 and G 122 Series M u lti-C h an n el FET Switches Reduces System Component Requirements o S ix In te rfa c e C irc u its on One C h ip

D125BP

Abstract: n3c5l D125 D125AL G122 D125B
Contextual Info: designed fo r . . . D125 Monolithic 6-Channel FET Switch Drivers B Siliconix BENEFITS • Interfacing Low Level Signals to IFET Switches such as G i l 5 and G 122 Series M u lti-C h an n el FET Switches • Reduces System Component Requirements o Six Interface Circuits in One Chip

2N4339

Abstract: sherwin 2N4339 Siliconix siliconix FET DESIGN rdbq
Contextual Info: TA70-2 s Siliconix TECHNICAL ARTICLE FET Biasing Jam es Sherwin INTRO DUCTION Engineers o ften design FET amplifiers th at are unnecessarily sensitive to device characteristics because they m ay n o t be familiar w ith proper biasing m ethods. One w ay to obtain consistent circuit perform ance in spite o f

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Contextual Info: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic

Contextual Info: . designed for B Siliconix DG161 DG163 Drivers with Differentially Driven Normally Open and Normally Closed FET Switches BENEFITS • • Switching High Frequencies ■ Switching in Satellite Applications Higher Signal Bandwidth Switching Capa­ bilities

Contextual Info: H Siliconix DG161 DG163 Drivers with Differentially Driven Normally Open and Normally Closed FET Switches designed for . . . BENEFITS • • Switching High Frequencies ■ Switching in Satellite Applications ■ Portable, Battery Operated Circuits ■ Low Signal Distortion Switching

Siliconix JFET

Abstract: Siliconix AN102 AN102 "Siliconix" "JFET" 2N4338 2N4339 2N5484 2N5912 J201 an102 siliconix
Contextual Info: AN102 Siliconix JFET Biasing Techniques Introduction Self bias also called source bias or automatic bias , which is a somewhat universal scheme particularly valuable for ac amplifiers. D Engineers who are not familiar with proper biasing methods often design FET amplifiers that are

VJ1206V

Abstract: PASSIVE line level crossover
Contextual Info: New Product SiP12205 Vishay Siliconix 300 kHz N-Channel FET Synchronous PWM Buck Controller DESCRIPTION FEATURES SiP12205 is a synchronous step down controller designed for use in DC-to-DC converter circuits requiring output currents as high as 10 Amperes. SiP12205 is designed to

Siliconix mos fet

Abstract: fiat G117 G117AL
Contextual Info: designed fo r . • . s Siliconix Gl 17 Monolithic 5-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals ■ M ultiplexing w ith Enable Switch Reduces External Component Requirements ' o Internal Zener Diode Protects the Gate o Five Switches Per Chip

dg133bp

Contextual Info: 2-Channel Drivers with SPST and DPST FET Switches . designed for H Siliconix BENEFITS • Sw itching H igh Frequencies ■ Sw itching in S a te llite Applications Higher Signal Bandwidth Switching Capa­ bilities o OFF Isolation > 60 dB @ 1 MHz Better Radiation

passive crossover

Abstract: SiP12205 adjustable passive crossover 2.1 crossover amplifier pcb PASSIVE line level crossover MLP33-10
Contextual Info: New Product SiP12205 Vishay Siliconix 300 kHz N-Channel FET Synchronous PWM Buck Controller DESCRIPTION FEATURES SiP12205 is a synchronous step down controller designed for use in DC-to-DC converter circuits requiring output currents as high as 10 Amperes. SiP12205 is designed to

70027

Abstract: 70027 battery Si9117 Si9117DY TL431 ISS 99 diode
Contextual Info: Si9117 Vishay Siliconix Si9117 High-Frequency Converter for Telecom Applications FEATURES • • • • On-board high-voltage, 1-Ω Switching FET Switching Frequencies of Up to 1 MHz Synchronization Capability Easily Compensated Current-Mode Operation •

G122

Abstract: G122AL
Contextual Info: designed for . . . S Siliconix G122 Monolithic 4-Channel Enhancement-Type MOS FET Switch B E N E FIT S • Switching A nalog Signals such as D ifferential Inputs M ultiplexing Reduces E xternal C om ponent Requirem ents o o Internal Zener Diode Protects the Gate

G115

Abstract: G116 G116AL G116AP
Contextual Info: designed for . . . s Siliconix G II6 M onolithic 5-Channel Enhancement-Type MOS FET Switch BENEEFITS Reduces External Component Requirements • Switching A n alo g Signals Internal Zener D iode Protects the Gate Five Switches Per C hip ■ M u ltip le x in g

SD5000

Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
Contextual Info: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an

FET U310

Abstract: uhf amplifier design U310 U310 fet siliconix FET DESIGN Ed Oxner fet 652 h siliconix DESIGN idea u310 siliconix siliconix fet
Contextual Info: DI71-9 H S ilic o n ix DESIGN IDEA W ideband UHF Amplifier with H igh-Perform ance FETs Ed Oxner INTRODUCTION A new freedom in UHF amplifier design is possible with high-performance “Super FETs” such as the Siliconix U310 Junction FET. Typical advantages include a closely-matched