AN1001
Abstract: Si6436DQ Si9936DY an1001 siliconix
Text: AN1001 Siliconix LITE FOOTt The Next Step in SurfaceĆMount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surfaceĆmount package, the
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AN1001
AN1001
Si6436DQ
Si9936DY
an1001 siliconix
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AN1001
Abstract: Si6436DQ Si9936DY si9936 640 1 TSSOP8
Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE
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AN1001
MS-012
S-00164--Rev.
31-Jan-00
07-Jun-00
AN1001
Si6436DQ
Si9936DY
si9936
640 1 TSSOP8
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TSSOP-8 footprint
Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE
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AN1001
12-Dec-03
TSSOP-8 footprint
MOSFET TSSOP-8
TSSOP8 Package
tssop8 thermal performance
single power diode package
AN1001
Si6436DQ
Si9936DY
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power switching with IRFP450 schematic
Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2
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AN-1005
06-Dec-11
power switching with IRFP450 schematic
POWER MOSFET CIRCUIT
BJT, General electric
Linear Application Note
FET IRFP450
Avalanche
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fet vcr compatible
Abstract: 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3
Text: AN105 Siliconix FETs As VoltageĆControlled Resistors A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.
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AN105
SST111
2N5486
SST5486
PN4119A
SST4119
fet vcr compatible
2N5486
AN105
J111
PN4119A
SST111
SST4119
SST5486
jfet J111 transistor
jfet idss 10 ma vp -3
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Siliconix JFET
Abstract: Siliconix AN102 AN102 "Siliconix" "JFET" 2N4338 2N4339 2N5484 2N5912 J201 an102 siliconix
Text: AN102 Siliconix JFET Biasing Techniques Introduction Self bias also called source bias or automatic bias , which is a somewhat universal scheme particularly valuable for ac amplifiers. D Engineers who are not familiar with proper biasing methods often design FET amplifiers that are
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AN102
2N4338/9
SST/J201
SST/2N5485
SST/J202
Siliconix JFET
Siliconix AN102
AN102
"Siliconix" "JFET"
2N4338
2N4339
2N5484
2N5912
J201
an102 siliconix
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TSSOP-8 footprint
Abstract: AN1001 Si6436DQ Si9936DY SI9936
Text: AN1001 LITTLE FOOTt TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC.
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AN1001
01-Sep-93
TSSOP-8 footprint
AN1001
Si6436DQ
Si9936DY
SI9936
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AN1001
Abstract: TSSOP-8 footprint Si6436DQ Si9936DY
Text: AN1001 LITTLE FOOTt TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC.
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AN1001
01-Sep-93
AN1001
TSSOP-8 footprint
Si6436DQ
Si9936DY
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9952
Abstract: Siliconix JFET AN105 VCR4N VCR2N
Text: VCR2N/4N/7N Siliconix JFET VoltageĆControlled Resistors Product Summary Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N -7 -25 60 VCR4N -7 -25 600 VCR7N -5 -25 8000 For applications information see AN105. Features Benefits Applications
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AN105.
P-37406--Rev.
9952
Siliconix JFET
AN105
VCR4N
VCR2N
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transistor 2n5088 equivalent
Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"
Text: AN106 Siliconix LowĆNoise JFETs Ċ Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowĆfrequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET
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AN106
transistor 2n5088 equivalent
transistor fn 1016
2N5088 equivalent
N CHANNEL jfet Low Noise Audio Amplifier
2N5088 SIMILAR
2n930 equivalent
JFETs Junction FETs
transistor j201
siliconix fet
Siliconix "low noise jfet"
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an104 siliconix
Abstract: TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176
Text: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.
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AN104
2N5116
SST176
an104 siliconix
TO-226A
U421 jfet
Siliconix AN104
jfet spice model
SST310 spice model
SILICONIX 2N4391
2N4391
J111
J176
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siliconix - j201
Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
Text: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,
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AN103
SST112
2N4392
2N4393
SST/J113
2N4392,
SST/J112
2N4393,
SST/J113
siliconix - j201
j201 jfet
2N4392
jfet cascade
SST4119
2N4341
AN103
J112
J202
SST112
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P-Channel Depletion Mode FET
Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic
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AN101
P-Channel Depletion Mode FET
p channel depletion mosfet
an101 siliconix
N-Channel JFET FETs
JFETs Junction FETs
Junction FETs JFETs
list of n channel fet
n channel depletion MOSFET
Depletion MOSFET
depletion
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2N4416
Abstract: 2N4416A AN104 SST4416 To206AF
Text: 2N4416/2N4416A/SST4416 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 v6 -30 4.5 5 2N4416, For applications information see AN104, page 21.
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2N4416/2N4416A/SST4416
2N4416
2N4416A
SST4416
2N4416,
AN104,
2N4416/A,
P-37408--Rev.
2N4416
2N4416A
AN104
SST4416
To206AF
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A561 transistor
Abstract: transistor a561 2N5911 2N5912 AN102 2N5912 jfet
Text: 2N5911/5912 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 2N5912, For applications information see AN102, page 6.
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2N5911/5912
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2N5912
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AN102,
P-37407--Rev.
A561 transistor
transistor a561
2N5911
2N5912
AN102
2N5912 jfet
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AN102
Abstract: SST440 SST441 JFET DUALS Siliconix JFET Duals SST4410
Text: SST440/441 Siliconix Monolithic NĆChannel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) SST440 -1 to -6 -25 4.5 -1 10 SST441 -1 to -6 -25 4.5 -1 20 SST441, For applications information see AN102, page 6.
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SST440/441
SST440
SST441
SST441,
AN102,
P-37405--Rev.
AN102
SST440
SST441
JFET DUALS
Siliconix JFET Duals
SST4410
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2N5114
Abstract: 2N4856A 2N5115 2N5116 AN104
Text: 2N5114/5115/5116 Siliconix PĆChannel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns) 2N5114 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5116 1 to 4 150 -10 42 2N5116, For applications information see AN104, page 21.
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2N5114/5115/5116
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2N5115
2N5116
2N5116,
AN104,
2N5114
2N4856A
2N5115
2N5116
AN104
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J113 equivalent
Abstract: J113 AN105 J111 J112 SST111 SST112 SST113 V31005
Text: J/SST111 Series Siliconix NĆChannel JFETs J111 J112 J113 Product Summary SST111 SST112 SST113 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 J/SST111, For applications information see AN105, page 22.
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J/SST111
SST111
SST112
SST113
J/SST111
J/SST112
J/SST113
J/SST111,
AN105,
J113 equivalent
J113
AN105
J111
J112
SST111
SST112
SST113
V31005
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VCR7N
Abstract: AN105 Siliconix JFET
Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled
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04-Jun-01
VCR7N
AN105
Siliconix JFET
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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CR160
Abstract: CR180 CR200 CR220 CR240 CR270 CR300 CR330 CR360 CR390
Text: CR160 Series Vishay Siliconix Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 PRODUCT SUMMARY Part Number Typ IF mA Min POV (V) Part Number Typ IF (mA) Min POV (V) CR160 1.60 100 CR300 3.00 100 CR180 1.80
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CR160
CR160
CR220
CR300
CR390
CR180
CR240
CR330
CR430
CR200
CR180
CR200
CR220
CR240
CR270
CR300
CR330
CR360
CR390
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This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988.
AR346.
AN1107.
This article
vmil120ft
acrian RF POWER TRANSISTOR
VMIL20FT
F2012 mosfet
acrian RF MOSFET
AR346
acrian RF MOSFET vmil40ft
VMIL40FT
n-channel enhancement mode vmos power fet
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VCR2N
Abstract: jfet transistor for VCR AN105
Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N −7 −25 60 VCR4N −7 −25 600 VCR7N −5 −25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled
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VCR2N
jfet transistor for VCR
AN105
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Untitled
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)
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IRF730A,
SiHF730A
AN1001)
O-220
12-Mar-07
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