Untitled
Abstract: No abstract text available
Text: TXPI 1065 Multi-mode Silicon PIN Detector With ST Style Submount DESCRIPTION FEATURES This is a high speed Silicon detector optimized for fiber optic applications requiring high Responsivity and a fast response time. High Responsivity High Electrical Bandwidth
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MTC280LS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C280LS-UV Peak Emission Wavelength: 280nm The MTC280LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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C280LS-UV
280nm
MTC280LS-UV
1270um
1470um
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Untitled
Abstract: No abstract text available
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]
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PDB-C116A
PDB-C116A
100-PDB-C116A
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Untitled
Abstract: No abstract text available
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]
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PDB-C116A
100-PDB-C116A
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Untitled
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 265LS-U V Peak Emission Wavelength: 265nm The MTC265LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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265LS-U
265nm
MTC265LS-UV
1270um
1470um
65LS-UV
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Untitled
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 265SS -U V Peak Emission Wavelength: 265nm The MTC265SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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265SS
265nm
MTC265SS-UV
870um
770um
65SS-UV
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MTC325LS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 325LS -UV Peak Emission Wavelength: 325 nm The MTC325LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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325LS
MTC325LS-UV
1270um
1470um
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MTC340LS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 340LS-UV Peak Emission Wavelength: 340 nm The MTC340LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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340LS-UV
MTC340LS-UV
1270um
1470um
340LS
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MTC325SS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 325SS-UV Peak Emission Wavelength: 325 nm The MTC325SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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325SS-UV
MTC325SS-UV
870um
770um
325SS
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MTC310LS-UV
Abstract: UV LED 310 nm
Text: Ultraviolet LED Chip Product No: M T C 310LS -UV Peak Emission Wavelength: 310 nm The MTC310LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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310LS
MTC310LS-UV
1270um
1470um
UV LED 310 nm
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MTC340SS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 340SS-UV Peak Emission Wavelength: 340 nm The MTC340SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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340SS-UV
MTC340SS-UV
870um
770um
340SS
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MTC280SS-UV
Abstract: UV LED 280NM
Text: Ultraviolet LED Chip Product No: M T C 280SS-UV Peak Emission Wavelength: 280nm The MTC280SS-UV UV chip on low profile silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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280SS-UV
280nm
MTC280SS-UV
870um
770um
C280SS-UV
UV LED 280NM
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Photodiode cost sheet
Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC
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PDB-C116
PDB-C116
100-PDB-C116
Photodiode cost sheet
die-attach
cl 1100
optical fiber detector photoconductive
Photodiode submount
submount
PD submount
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photodiode demodulation
Abstract: gold metal detectors gold detectors circuit bond wire gold fiber optic detector fibre optic laser ceramic package PDB-C122
Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA CL .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION
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PDB-C122
PDB-C122
100-PDB-C122
photodiode demodulation
gold metal detectors
gold detectors circuit
bond wire gold
fiber optic detector
fibre optic laser
ceramic package
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Untitled
Abstract: No abstract text available
Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA C L .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION
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PDB-C122
PDB-C122
100-PDB-C122
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SAE230VX
Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity
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SAE500VS
SAE500VX
SAE230VX
SAE500
avalanche photodiode
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PDB-C122
Abstract: No abstract text available
Text: Blue Enhanced Photoconductive Silicon Photodiode PDB-C122 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE .080 [2.03] .040 [1.02] .060 [1.52] .030 [0.76] CATHODE ANODE .020 [0.51] .015 [0.38] .008 [0.20] MAX ANODE CATHODE .050 [1.27]
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PDB-C122
PDB-C122
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA3547â
CxxxDA3547-Sxxx00
DA3547
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cree
Abstract: DA3547
Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00-2 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA3547TM
CxxxDA3547-Sxxx00-2
DA3547
cree
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DA2432
Abstract: cxxxd DA243 C470DA2432-0701-2
Text: Direct Attach DA2432 LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA2432TM
CxxxDA2432-Sxxx00-2
DA2432
cxxxd
DA243
C470DA2432-0701-2
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DA3547
Abstract: AuSn eutectic ausn submount
Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA3547TM
CxxxDA3547-Sxxx00
DA3547
AuSn eutectic
ausn submount
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PDF
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA2432 LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA2432â
CxxxDA2432-Sxxx00-2
DA2432
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hte 2642
Abstract: InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30641 C30665 C30619
Text: C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler Not yet available for C30665 Window Option: E: G: Silicon Glass (See below for availability)
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C30619,
C30641,
C30642,
C30665
C30665)
C30619
C30641
C30642
ISO-9001
hte 2642
InGaas PIN photodiode, 1550 sensitivity
HTE-2642
C30642E
C30642
PerkinElmer 1700
ESILICON
C30665
C30619
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MC2004
Abstract: MC2004-5DIEW MC2004-5DIE FALCON 250-1002 MC2045 photodetector pin 155mbps
Text: Microcosm ‘TZ’ Amplifier IC MC2004-5 Low-Cost Transimpedance Amplifier IC for Fiber Optic Applications at 155Mbps Main Features: General Description: q The MC2004-5 is a high performance linear transimpedance amplifier available in die form. It is designed to be mounted with a silicon or InGaAs
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MC2004-5
155Mbps
MC2004-5
120MHz/
155Mbps.
-34dBm
-11dBm
MC2004-5DIE
MC2004-5DIEW
MC2004
MC2004-5DIEW
MC2004-5DIE
FALCON
250-1002
MC2045
photodetector pin 155mbps
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