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    C30641 Price and Stock

    Excelitas Technologies Corporation C30641GH

    SENSOR PHOTODIODE 1550NM TO206AA
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    DigiKey C30641GH Bulk 1
    • 1 $111.3
    • 10 $108.625
    • 100 $108.625
    • 1000 $108.625
    • 10000 $108.625
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    AMD Xilinx XC3064-100PC84C

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    Bristol Electronics XC3064-100PC84C 151
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    AMD Xilinx XC3064-100PQ160C

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    Bristol Electronics XC3064-100PQ160C 144
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    AMD Xilinx XC3064-125PQ160C

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    Bristol Electronics XC3064-125PQ160C 76
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    AMD Xilinx XC3064-100PP132C

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    Bristol Electronics XC3064-100PP132C 31
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    C30641 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30641 PerkinElmer Optoelectronics Large-Area InGaAs Photodiodes Original PDF
    C30641 RCA Solid State Photodiodes Scan PDF
    C3064.18.86 General Cable Multiple Conductor Cables, Cables, Wires, 3C/18 7/26BC PVC/OA/FLEX 500' Original PDF
    C30641E PerkinElmer Optoelectronics Large-area InGaAs photodiode. TO-18 low profile with silicon window. Original PDF
    C30641E-DTC PerkinElmer Optoelectronics Large-Area InGaAs Photodiode Original PDF
    C30641E-TC PerkinElmer Optoelectronics Photodiode, PIN Module, 0.9A/W Sensitivity, 5nA Original PDF
    C30641G PerkinElmer Optoelectronics Large-area InGaAs photodiode. TO-18 with glass window. Original PDF
    C30641G-DTC PerkinElmer Optoelectronics Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler. Original PDF
    C30641GH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - LARGE AREA INGAAS PIN PHOTODIODE Original PDF
    C30641GH-LC Excelitas Technologies INGAAS PIN, 1.0MM, TO-18, GLASS, Original PDF
    C30641G-TC PerkinElmer Optoelectronics Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler. Original PDF

    C30641 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hte 2642

    Abstract: HTE-2642 C30642E ESILICON PerkinElmer Optoelectronics AQAP-1 near IR photodiodes pin Photodiode 1550 nm C30619 C30641
    Text: Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications Large-Area InGaAs Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A including optical power meters, fiber optic test


    Original     		C30619, C30641, C30642, C30665 C30619 C30641 C30642 hte 2642 HTE-2642 C30642E ESILICON PerkinElmer Optoelectronics AQAP-1 near IR photodiodes pin Photodiode 1550 nm C30619 PDF

    hte 2642

    Abstract: InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30641 C30665 C30619
    Text: C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler Not yet available for C30665 Window Option: E: G: Silicon Glass (See below for availability)


    Original     		C30619, C30641, C30642, C30665 C30665) C30619 C30641 C30642 ISO-9001 hte 2642 InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30665 C30619 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    InGaAs quadrant

    Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
    Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom


    Original     		C30845EH YAG-444-4AH DTC-140H InGaAs quadrant C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A PDF

    C30642E

    Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
    Text: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -


    OCR Scan     		C30618, C30619, C30641, C30642 ED-0020/03/88 C30642E rca 514 C30618 C30619 C30641 C30642 T018 el 85 PDF

    C30642E

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK 10 ]> • 3G3QblQ OOODGTG Dûô 'T ^ £/ / " 5 3 M CANA 0 * ÆW Electro Photodiodes ■ miff ■ O ptics C30618, C30619, C30641, C30642 ■ B DATA SHEET Large Area Planar PIN InGaAs Photodiodes ■ Large areas with uniform responsivity


    OCR Scan     		C30618, C30619, C30641, C30642 C30642E PDF

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage


    OCR Scan     		1550nm C86091E 86091E PDF

    EG*G Optoelectronics

    Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
    Text: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage


    OCR Scan     		3030bl0 1550nm C86091E C86091E ED-0053/06/91 EG*G Optoelectronics C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 PDF