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    SILICON N-CHANNEL JUNCTION FET SOT23 Search Results

    SILICON N-CHANNEL JUNCTION FET SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SILICON N-CHANNEL JUNCTION FET SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Bft46

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 Bft46

    CRS15

    Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect


    Original     		PDF BFT46 MAM385 CRS15 BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p

    CRS15

    Abstract: BFT46
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 CRS15 BFT46

    Junction-FET

    Abstract: fet smd marking v2 2SK303
    Text: Junction FET SMD Type N-Channel Junction Silicon FET 2SK303 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Ideal for potentiometers, analog switches, low 0.4 3 1 0.55 impedance conversion. +0.1 1.3-0.1 +0.1 2.4-0.1 frequency amplifiers, constant current supplies, and


    Original     		PDF 2SK303 OT-23 Junction-FET fet smd marking v2 2SK303

    Junction-FET

    Abstract: KSK211
    Text: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER SOT-23 • NF =2.5dB TYP •YFS=9.0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDO IG PD TJ T STG Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature


    Original     		PDF KSK211 OT-23 Junction-FET KSK211

    2SK932

    Abstract: No abstract text available
    Text: 2SK932 Ordering number : EN2841A SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process


    Original     		PDF EN2841A 2SK932 2SK932-applied 2SK932

    2sk932

    Abstract: No abstract text available
    Text: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process


    Original     		PDF EN2841B 2SK932 2SK932-applied 2sk932

    Untitled

    Abstract: No abstract text available
    Text: 2SK2394 Ordering number : EN4839B SANYO Semiconductors DATA SHEET 2SK2394 N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications Applications • • AM tuner RF amplifier Low-noise amplifier Features • • • • Large | yfs | Small Ciss


    Original     		PDF 2SK2394 EN4839B 2SK2394-applied

    Untitled

    Abstract: No abstract text available
    Text: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process


    Original     		PDF 2SK932 EN2841B 2SK932-applied

    Untitled

    Abstract: No abstract text available
    Text: 2SK545 Ordering number : EN1789C SANYO Semiconductors DATA SHEET 2SK545 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance converter applications Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting 2SK545-applied sets to be compact


    Original     		PDF 2SK545 EN1789C 2SK545-applied

    FET packing marking Mt

    Abstract: No abstract text available
    Text: 2SK545 Ordering number : EN1789C SANYO Semiconductors DATA SHEET 2SK545 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance converter applications Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting 2SK545-applied sets to be compact


    Original     		PDF EN1789C 2SK545 2SK545-applied 013A-011 FET packing marking Mt

    Untitled

    Abstract: No abstract text available
    Text: KSK211 KSK211 FM Tuner VHF Amplifier • NF =2.5dB TYP • YFS=9.0 mS (TYP) 3 2 1 SOT-23 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings


    Original     		PDF KSK211 OT-23 OT-23 KSK211GMTF KSK211OMTF KSK211YMTF KSK211

    KSK211

    Abstract: No abstract text available
    Text: KSK211 KSK211 FM Tuner VHF Amplifier • NF =2.5dB TYP • YFS=9.0 mS (TYP) 3 2 1 SOT-23 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings


    Original     		PDF KSK211 OT-23 KSK211

    KSK211OMTF

    Abstract: No abstract text available
    Text: KSK211 KSK211 FM Tuner VHF Amplifier • NF =2.5dB TYP • YFS=9.0 mS (TYP) 3 2 1 SOT-23 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings


    Original     		PDF KSK211 OT-23 OT-23 KSK211OMTF

    Hard Disk drive spindle motor control inductive sense

    Abstract: design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller PHN405
    Text: IDEAS FOR DESIGN Page Power/battery switching using VD-MOS FETs 2 Drivers for brushless DC motors 4 Using the PHN708 and PHN405 in hard disk drives 6 Siren driver circuit for car alarms 9 Printed circuit board heatsink area for surface-mount packages 10 Philips Semiconductors


    Original     		PDF PHN708 PHN405 MBB446 OT223 Hard Disk drive spindle motor control inductive sense design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller

    Untitled

    Abstract: No abstract text available
    Text: NCP345 Over Voltage Protection IC The NCP345 over–voltage protection circuit OVP protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and


    Original     		PDF NCP345 r14525 NCP345/D

    ac adapter delta electronics

    Abstract: No abstract text available
    Text: Back NCP345 Over Voltage Protection IC The NCP345 over–voltage protection circuit OVP protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and


    Original     		PDF NCP345 r14525 NCP345/D ac adapter delta electronics

    Q62702-F1372

    Abstract: No abstract text available
    Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    Original     		PDF Q62702-F1372 OT-23 Q62702-F1372

    NCP345SNT1

    Abstract: mosfet cl sot23-5 MBRM120LT3 NCP345 Silicon P-Channel Junction FET sot23 Li-Ion Battery Charger SOT23-5 V5 SOT23-5 car battery charger circuit diagram
    Text: NCP345 Over Voltage Protection IC The NCP345 over–voltage protection circuit OVP protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and


    Original     		PDF NCP345 NCP345 r14525 NCP345/D NCP345SNT1 mosfet cl sot23-5 MBRM120LT3 Silicon P-Channel Junction FET sot23 Li-Ion Battery Charger SOT23-5 V5 SOT23-5 car battery charger circuit diagram

    marking code 2Ap

    Abstract: Silicon N-Channel Junction FET sot23 transistor 2Ap BF862 fet junction n-channel transistor Philips fet SOT23 code marking Junction-FET fet-bf862 junction fet high frequency n-channel SOT23 FET
    Text: Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in AM car radios PIN • High transfer adm ittance. DESCRIPTION 1 source 2 drain 3 gate APPLICATIONS


    OCR Scan     		PDF BF862 O-236AB marking code 2Ap Silicon N-Channel Junction FET sot23 transistor 2Ap BF862 fet junction n-channel transistor Philips fet SOT23 code marking Junction-FET fet-bf862 junction fet high frequency n-channel SOT23 FET

    bf862

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in


    OCR Scan     		PDF BF862 MSB003 bf862

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • /dss = 4 mA, g is = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1372 OT-23 EHM07Ã 1B1L75

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1372 OT-23 EHT07032 300MHz