SILICON DRIFT DIODE Search Results

ML4708

Abstract: IMPATT
Contextual Info: ML 400« SERIES SILICON SINGLE DRIFT IMPATT DIODES The M L 4700 Series o f single drift silicon im patt diodes are specifically designed for use as fundam ental frequency direct dc to RF conversion microwave oscillators and amplifiers in the frequency range 5-35GHz.

2E14

Abstract: 4h sic
Contextual Info: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield

MA45334

Contextual Info: MA45334 SILICON ABRUPT TUNING VARACTOR DIODE DESCRIPTION: The ASI MA45334 is a Silicon Abrupt Tuning Varactor, designed for applications through S-band. PACKAGE STYLE DO-7 FEARTURES: • High Q • Low Leakage • Low Post Tuning Drift MAXIMUM RATINGS V 30 V

Contextual Info: A/jfc'XsA MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS ■ REPRODUCIBLE C-V CURVES Applications The MA4ST550 family of high Q Silicon Hyperabrupt

Contextual Info: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :

IMPATT

Contextual Info: MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH X-BAND ■ CAN BE SCREENED TO TX, TXV SPECIFICATIONS Applications The MA45300 series of silicon planar abrupt junction tun­

T393D

Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
Contextual Info: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization

LM308A

Contextual Info: MOTOROLA LM308A SEMICONDUCTOR TECHNICAL DATA SUPER GAIN OPERATIONAL AMPLIFIER Precision Operational Amplifier SILICON MONOLITHIC INTEGRATED CIRCUIT The LM 308A operational am plifier provides high input impedance, low input offset and tem perature drift, and low noise. These characteristics are made

Gunn Diode 72 GHz

Abstract: MA456
Contextual Info: AfoCC-û MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE \ i * r h f— — J 4 ■ LOW POST TUNING DRIFT - ■ CUSTOM DESIGNS AVAILABLE 1 = 54 / - "V V / ^ ■ FREQUENCY RANGE THROUGH

seeker

Abstract: MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST555 MA4ST556
Contextual Info: High Q Hyperabrupt Tuning Varactors MA4ST550 Series V3.00 Case Styles Features ● ● ● ● High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt

missile seeker

Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Contextual Info: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —

impatt diode

Abstract: impatt diode operation AN961 5082-0710 IMPATT
Contextual Info: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating

impatt diode

Contextual Info: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products

ODS-30

Contextual Info: MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS ■ REPRODUCIBLE C-V CURVES Applications The M A4ST550 fam ily of high Q S ilicon H yperabrupt

impatt diode

Abstract: apc-7 connector impatt impatt diode operation radar impatt CW doppler radar Silicon drift diode hp 0611 diode GG 14
Contextual Info: H E W L E T T PACKARD COMPONENTS DIODES HIGH POWER, HIGH EFFICIENCY SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 10-14 GHZ Features AND STEP RECOVERY HIGH POWER O U TP U T Typically: 2.5W from 10 to 14 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IEN T O PERATIO N

impatt diode

Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
Contextual Info: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N

Contextual Info: an A M P com pany High Q Hyperabrupt Tuning Varactors MA4ST550 Series V3.00 Case Styles Features • High Q • Usable Capacitance Change of 7:1 • Low Reverse Leakage for Good Post Tuning Drift Characteristics • Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt

MA4ST550

Abstract: ODS-134 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST555 MA4ST556 MA4ST557 MA4ST558
Contextual Info: M/A-COM SEMICONDtBRLNGTON MA- 11 D S b 4 2 S l 4 DDG121b. G « M I C I ''0 7 '' MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS

impatt

Abstract: Gunn Diode MA45338 IMPATT Diode stub tuner waveguide MA45330 MA45331 MA45332 MA45333 MA45334
Contextual Info: M/ A- CO H S E U I C O N D n B R L N G T O N Ajm 11 D Sb42214 G0D12S0 0 H M I C 1-0 MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors * V Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH

2n2222 national semiconductor

Abstract: Widlar national 2n2222 2N2222 national 2n2222 transistor LM113 2N2222 NPN Transistor features LM113 equivalent 2N2222 AN-56
Contextual Info: INTRODUCTION Temperature compensated zener diodes are the most easily used voltage reference However the lowest voltage temperature-compensated zener is 6 2V This makes it inconvenient to obtain a zero temperature-coefficient reference when the operating supply voltage is 6V or lower With the

impatt diode

Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

photodiode ge

Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
Contextual Info: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,

MPSA43 equivalent

Abstract: LB-41 LM103 LM134 MPSA43 LM103 zener LB41
Contextual Info: National Semiconductor Linear Brief 41 June 1978 Increasing interest in battery-operated analog and digital circuitry in recent years has created the need for a micro-power voltage reference. In particular, the reference should draw 10 µA or less and operate from a single 5V supply. These requirements eliminate zener diodes which tend to have unpredictable temperature drift and are noisy at low currents

254 nm uv LED

Abstract: Chiller umbilical connector UV diode 250 nm r134a Q302 Q303-HD 532 nm laser diode umbilical Q3-04
Contextual Info: COMMERCIAL LASERS High-Power Q-Switched Diode-Pumped UV Laser Q Series Key Features • Highest commercially available pulse energy and peak power • Tighter process control due to superior energy stability enabled by unique intracavity harmonic generation