SILICON DIODE 4004 Search Results

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

ERW09-120

Contextual Info: SPECIFICATION SILICON DIODE DEVICE NAME TYPE NAME : E R W 0 9 - 1 20 SPEC. No. DATE F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE DRAWN NAM E APPROVED Fuji Electric CoJLid < C\ CHECKED 1/6 Y 0257-R“004a Ratings and characteristics of Fuji silicon diode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4004G DIODE GLASS PASSIVATED SILICON RECTIFIER „ 1 DESCRIPTION The UTC 1N4004G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

VSO05561

Contextual Info: BAS 40W. Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 3 1 2 1 2 EHA07005 1 VSO05561 2 EHA07006 EHA07004

H24A1

Abstract: H24A2 ST2006 ST4004 J279 ST2038
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with

DIODE S3V 43

Abstract: DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08
Contextual Info: H&D J> ITEL-EFUNKEN ELECTRONIC m ß^EOO^b PÜD7b7? IAL66 CNR 21 TTIUStFQflMKlIM electronic _ Creative Technologies Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor

DIODE S3V 94

Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
Contextual Info: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor

surface mount diode w1

Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

1N4007 sma

Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

surface mount 1n4007

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

diode 4007 details

Abstract: 1N4007 SURFACE MOUNT Diode ttr
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

1N4007 sma

Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

DO-213AB 4007

Abstract: 4007 diode do-213AB melf diodes color DO213-AB color band 4003 diode rectifier DO-213AB diode rectifier 4001 DIODE 4005 SM4001-SM4007 IN 4004 diodes
Contextual Info: SM 4001.SM 4007 Type Polarity color band Repetitive peak reverse voltage Surge peak reverse voltage Maximum forward voltage Tj = 25 °C Maximum reverse recovery time IF = 1 A IF = - A IR = - A IRR = - A VRRM Surface mount diode Standard silicon rectifier

4E921

Abstract: 40188 ODS-120 ODS-186 40298 4E920 ODS-276 schottky selection guide 4e925 4E969
Contextual Info: COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION SILICON SCHOTTKY MIXER DIODE CHIP & BEAM LEAD SELECTION GUIDE PRODUCTS OPERATION 1 Frequency Band ODS-990 1 Single Beam Lead (#4232)* ODS-965{2) Single Beam Lead (#4232)* ODS-942 ODS-264 Anti-Parallel

1n4001 trr

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

diode rectifier 1n4001

Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS

Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel

smd marking 3 pin 44s

Abstract: 44s sot23 SOT-23 marking 45s DIODE ED 92 smd 3-pin marking ct Dual Common Anode 3-pin
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON SCHOTTKY DIODE 3 3 Pin Configuration Pin Configuration 1 = NC 2 = ANODE 3 = CATHODE 2 1 3 1 = ANODE

H24B2

Contextual Info: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package.

a2 marking

Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065

44S DIODE

Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065

MARKING 720 SOT23

Abstract: DIODE 4004 BAS 20 SOT23 4004 diode 44s sot23 DIODE 4005 720 SOT23 43s sot23 4004 top marking c2 sot23
Contextual Info: BAS 40 . Silicon Schottky Diodes 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40 BAS 40-04 BAS 40-05 1 3 1 2 EHA07002 BAS 40-06 3 3 3 VPS05161 1 2 EHA07005 1

Contextual Info: SP EC I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME ERWO 2 - 0 > 60 SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DAT É DRAWN NAME APPROVED Fuji E lectric C a n te i — á jx CHECKED

XLS-10

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc ICM Units Rge = 20 T oase = 25/60 °C Tease = 25/60 °C; tp = 1 ms V ges Ptot per IG B T , T oase = 25 °C T j, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1