SILICON DIODE 3A Search Results

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

schottky diode

Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

"Schottky Diode"

Abstract: 1N5822 data sheet
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

a2165

Contextual Info: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode

Contextual Info: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode

MCH3406

Abstract: SBS010M CPH5831
Contextual Info: CPH5831 Ordering number : ENN8220 CPH5831 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converters. Composite type with a N-Channel Silicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS010M) contained

Contextual Info: 拡散型シリコンダイオード 3A 200V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 30PDA20 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用

30PDA2

Contextual Info: 拡散型シリコンダイオード 3A 200V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 30PDA20 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用

Contextual Info: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M

SCH2830

Contextual Info: SCH2830 Ordering number : ENA0861 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package

BULD125KC

Abstract: electronic ballast with npn transistor
Contextual Info: BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs

Contextual Info: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode

10 DC-4 diode

Contextual Info: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode

melf diode color

Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode

LL4148 diode galaxy electrical

Abstract: MELF DIODE color bands LL4148 LL4148 melf
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode

LL4148

Abstract: DIODE LL4148
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case

LL4448

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

LL4148

Abstract: CHENYI ELECTRONICS 1N4148 1N4148
Contextual Info: CE LL4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4148 MECHANICAL DATA Dimensions in inches and millimeters

1N4148 DO-34

Abstract: 100HZ 100MHZ 1N4148
Contextual Info: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF DO-34 GLASS 1.143 (29.03)

diode led ir

Abstract: small signal diodes case ja 1N4151 LL4151 electronics symbols
Contextual Info: CE 1N4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4151 MECHANICAL DATA . Case: DO-35 glass case

Contextual Info: LL4148 SMALL SIGNAL REVERSE VOLTAGE - 75 Volts FORWARD CURRENT - 0.15Amperes SWITCHING DIODE DL - 35 FEATURES ● Silicon epitaxial planar diode ● High speed switching diode ● 500mW power dissipation .063 1.6 .055(1.4) .020(0.5) .012(0.3) .146(3.7) .130(3.3)