SILICON CONTROLLED RECTIFIED Search Results

scr C232

Abstract: types of scr packages scr C230 C230-C232 SCR TRIGGER PULSE scr c231 C230C C231C C231-C233 SCR 406 C232
Contextual Info: Silicon Controlled Rectifier C230-C232 C231-C233 2 5 ARMS TO 6 0 0 VOLTS The Silicon Controlled Rectifier C230/C232 is a reverse blocking triode thyristor designed for power switching and control circuits for high volume light industrial and consumer applications.

types of scr packages

Abstract: SCR 131- 6 W 49 General electric SCR manual General electric SCR SCR Manual, General electric transformer 220 volts 60 Hz specifications thyristor SCR 406 Silicon Controlled Rectifier Manual universal MOTOR speed control using scr "scr manual"
Contextual Info: Silicon Controlled Rectifier 35 A RM S C228 C229 50 TO 600 VOLTS The Silicon Controlled Rectifier C228/C229 is a reverse blocking triode thyristor. This SCR is a hermetically sealed device which incorporates General Electric’s patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an

Silicon Controlled Rectifier Manual

Abstract: types of scr packages General electric SCR manual "scr manual" scr 60 amps 800 volts SCR Manual, General electric universal MOTOR speed control using scr scr manual SCR TRIGGER PULSE 3 phase C229
Contextual Info: C228 C229 Silicon Controlled Rectifier 35 A RM S 50 TO 600 VOLTS The Silicon Controlled Rectifier C228/C229 is a reverse blocking triode thyristor. This SCR is a hermetically sealed device which incorporates General Electric’s patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an

ZAR710

Abstract: ZAR610 D13B BZS21 KR56 ZAR210 D11A KR50 KR51 KR52
Contextual Info: SILICON DIODES Silicon Controlled Avalanche Rectifiers Characteristics Max. Ratings at 25°C Vrw m Type No. volts Mean Rect. current Amps Reverse Power kW * Max. Vp at 5 Amps volts Max. I r 91 V RWM lnA Jedec Outline Avalanch e Voltage at 5mA min. max. Outline

BAX12

Contextual Info: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone

Contextual Info: Silicon Switching Diode DO-34 Glass Package 1N4534 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-34 Glass Package • Six sigma quality • Metallurgical^ bonded

diode smd ED 84

Abstract: DSAIH00025343 SMD 437 diode
Contextual Info: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality

306-803

Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
Contextual Info: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is

4066 Handbook

Abstract: 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101
Contextual Info: K1L-S-19500/280A EC 6 .Tannery 197» SUPERSEDING HTL-S-19500/280(NAVY) 2 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, AND 2N3106

Contextual Info: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality

SS34 smc

Abstract: SS34 SS36 single phase half controlled rectifier
Contextual Info: SS3 Series Controlled Avalanche Power Diodes Features: • For surface mounted application. • Metal to silicon rectifier, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. • High surge current capability. • Epitaxial construction

smd 2U 75 diode

Abstract: SMD DIODE 2U smd 2U diode DSAIH0002551
Contextual Info: Silicon Switchina Diode Applications 1N4153, 1N4153-1 k_1I DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lead D ia

1N4153-1

Abstract: 337 SMD 1N4150 1N4153
Contextual Info: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality

Contextual Info: Silicon Switching Diode 1N4150 Applications 1 DO-35 Glass Package Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features • • • DO-35 Glass Package nominal dimensions Six sigma quality

1N4153

Abstract: 337 SMD 1N4153-1
Contextual Info: Silicon Switching Diode Applications 1N4153, 1N4153-1 DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded

Contextual Info: Silicon Switching Diode 1 DO-35 Glass Package 1N4148 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions

ss14 do-214ac

Abstract: ss14 do-214ac sma 39 do-214ac SS110 SS14 SS16 SS14 application notes
Contextual Info: SS1 Series Controlled Avalanche Power Diodes Features: • • • • • • • For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Epitaxial construction.

SMD 437 diode

Abstract: BKC Semiconductors DSAIH0002562 0000b32
Contextual Info: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per

Contextual Info: \Pioauaii, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N1600 SILICON PNPN CONTROLLED RECTIFIER maximum ratings — all temperatures Indicated are stud temperatures VFI,I) V, I, lf i,

NTE517

Abstract: HIGH VOLTAGE Rectifier for microwave ovens silicon controlled rectified
Contextual Info: NTE517 Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven Features: D Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power D Low Forward Voltage Drop D Typical IR less than 0.1A D High Overload Surge Capacity

CI 4026

Abstract: 1N4150 1N4150-1 4031-A diode 1n4150
Contextual Info: Silicon Switching Diode 1N4150 DO-35 Glass Package 11NNor1 or 1N4150-1 1N Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded

1N4148UR-1

Abstract: DO-213AA mini-melf-smd
Contextual Info: MINI-MELF-SMD Silicon Diode 1N4148UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. LL-34/35 MINI MELF Features Surface Mount Package DO-213AA Six sigma quality

ITRON DC 205

Abstract: 448-48
Contextual Info: GENL INSTR/ POUER 3flE D 3ST0137 OOQ4fl4T T • GIC T'23~0S AW02G THRU AW08G MINIATURE GLASS PASSIVATED CONTROLLED AVALANCHE SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 200 to 800 Volts CURRENT - 1 . 5 Amperes FEATURES ♦ Glass passivated chip junctions

SCR gate drive circuit

Abstract: NXL0840
Contextual Info: NXL0840 SCR logic level Rev. 01 — 26 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier SCR in a SOT54 plastic package 1.2 Features • Direct interfacing to logic level ICs