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    SILICON CARBIDE Search Results

    SILICON CARBIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation
    RH5Z1210D20GZO#ADO Renesas Electronics Corporation RTD120 Series Silicon Based Thermopile Detector Visit Renesas Electronics Corporation
    RH5Z0610D20GZO#ADO Renesas Electronics Corporation RTD60 Series Silicon Based Thermopile Detector Visit Renesas Electronics Corporation
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    SILICON CARBIDE Price and Stock

    ROHM Semiconductor SCT3030AW7TL

    SiC MOSFETs TO263 650V 70A N-CH SIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SCT3030AW7TL Reel 1,000 1,000
    • 1 -
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    • 100 -
    • 1000 $24.14
    • 10000 $24.14
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    ROHM Semiconductor SCT3080KW7TL

    SiC MOSFETs TO263 1.2KV 30A N-CH SIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SCT3080KW7TL Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.2
    • 10000 $11.2
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    ROHM Semiconductor SCS240AE2GC11

    SiC Schottky Diodes DIODE 650V 40A 3-PIN THD SIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SCS240AE2GC11 Tube 870 30
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    • 100 $9.35
    • 1000 $7.34
    • 10000 $7.34
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    ROHM Semiconductor SCT4026DRC15

    SiC MOSFETs TO247 750V 56A N-CH SIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SCT4026DRC15 Tube 450 50
    • 1 -
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    • 100 $13.67
    • 1000 $13.3
    • 10000 $13.3
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    ROHM Semiconductor SCT4036KEC11

    SiC MOSFETs TO247 1.2KV 43A N-CH SIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SCT4036KEC11 Tube 450 50
    • 1 -
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    • 100 $13.51
    • 1000 $13.51
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    SILICON CARBIDE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SCS120AGC

    Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
    Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have


    Original     		CNA110004 SCS120AGC SCS110AGC SCS108AGC SCS112AGC 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog PDF

    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


    Original     		600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v PDF

    W4PRE8F-0200

    Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00
    Text: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1


    Original     		PDF

    W6NRD0X-0000

    Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
    Text: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for


    Original     		PDF

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
    Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output


    Original     		RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode


    Original     		SPM1007 PDF

    IGBT 50 amp 1000 volt

    Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
    Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode


    Original     		PDF

    ultrafast igbt

    Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
    Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching


    Original     		of169 1200-volt CPWR-AN03, ultrafast igbt IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A PDF

    SDP20S120D

    Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
    Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature


    Original     		SDP20S120D O-247 SDP20S120D C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories PDF

    L4821A

    Abstract: SPD10S30 A101 SIDC03D30SIC2
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A, PDF

    L4821A

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, PDF

    SEMISOUTH

    Abstract: SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide
    Text: Silicon Carbide PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage


    Original     		SDP30S120 SEMISOUTH SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide PDF

    SCHOTTKY 4A 600V

    Abstract: DIODE 200A 600V schottky
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, SCHOTTKY 4A 600V DIODE 200A 600V schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, PDF

    L4804A

    Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V PDF

    diode schottky 600v

    Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
    Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC11D60SIC3 Q67050-A4161A104 diode schottky 600v 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454 PDF

    SEMISOUTH

    Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
    Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current


    Original     		SDP10S120D O-247 SEMISOUTH SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device PDF

    SDP10S30

    Abstract: SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS
    Text: SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery


    Original     		SIDC24D30SIC3 Q67050-A4163A103 SDP10S30 SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS PDF

    SPD06S60

    Abstract: diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454
    Text: SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC19D60SIC3 Q67050-A4162A104 SPD06S60 diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454 PDF

    DIODE 200A 600V schottky

    Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
    Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode PDF

    600 V power Schottky silicon carbide diode

    Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
    Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		SIDC05D60SIC3 Q67050-A4201A103 600 V power Schottky silicon carbide diode Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454 PDF