SILICON BIPOLAR TRANSISTOR Search Results

AT-420

Contextual Info: H EW LETT' mLlíM PA CK A R D RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature

Bipolar Junction Transistor

Abstract: 414 rf transistor AT-420
Contextual Info: RF and Microwave Silicon Bipolar␣ Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology both in the understanding of the device physics and

AT605

Contextual Info: RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology both in the

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

2N6665

Abstract: MA42001-509 MA42001 MA42010
Contextual Info: Silicon Low Noise Bipolar Transistors MA42000 Series Description NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750 MHz. These transistors have flat noise figures over a wide

IC 8088

Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Contextual Info: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

HP346A

Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

bipolar transistor s-parameter

Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed

yg 2025

Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

Contextual Info: 11 T> m Sb4E514 MA42000 Series Description 000145D Ö « n i C M/A-COM Silicon Low Noise Bipolar Transistors SEMICOND-iBRLNGTON . T ' 3 I ~ *? NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750

HBFP0450

Abstract: HBFP-0450 LL1608-FH2N7S MGA-52543 Silicon Bipolar Transistor HBFP-0450 ADS MODEL 20NF2 agilent semiconductor
Contextual Info: A 400, 900 and 1800 MHz Buffer/Driver Amplifier using the Agilent HBFP-0450 Silicon Bipolar Transistor Application Note 1206 Introduction Agilent Technologies’ HBFP-0450 is a high performance isolated collector silicon bipolar transistor housed in 4-lead SC-70 SOT-343

AT-310

Abstract: AT-31011 AT-31033 SAI SOT23
Contextual Info: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

transistor zo 107

Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.

8 pin ic 3844 for 5 volts

Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.

uPC1158H2

Abstract: PC1158H2 UPC1158H UPC1158 PC1158H PC1158 O72C PC11 microphone amplifier with alc S3NAB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT JUL PC1158H2 LOW NOISE PREAMPLIFIER WITH AUTOMATIC LEVEL CONTROL SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The uPC 1158H2 is a silicon monolithic integrated circuit designed for high gain, low noise preamplifier

PC3223TB

Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

mount chip transistor 332

Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available

PTH hole diameter vs lead resistor

Abstract: common emitter amplifier circuit designing W105 0805CS-080XMBC HBFP-0405 HBFP0420 HBFP-0420 HBPF-0405 common base amplifier circuit designing
Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface

w06 transistor

Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
Contextual Info: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface

Contextual Info: Power Silicon Bipolar Transistors S e le ctio n G u id e .4-2

at 64000

Abstract: at64000 S21E at-64000
Contextual Info: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over