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    SILICON BIPOLAR RF TRANSISTOR MICROWAVE T Search Results

    SILICON BIPOLAR RF TRANSISTOR MICROWAVE T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SILICON BIPOLAR RF TRANSISTOR MICROWAVE T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bfr96 equivalent

    Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
    Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal


    Original     		PDF MCE545 Symb333 SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA bfr96 equivalent MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237

    CD2397

    Abstract: cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"
    Text: CD2397 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2397 is a common base NPN Bipolar Microwave Transistor. It is designed for Pulse Applications within the 960 to 1215 MHz Avionics frequency range. PACKAGE STYLE .230 2L FLG FEATURES: • Common Base Pulse at 43V


    Original     		PDF CD2397 CD2397 cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"

    j105 transistor

    Abstract: MS1009 J108 - TRANSISTOR
    Text: MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1009 is a silicon NPN bipolar transistor designed primarily for VHF communication applications. Gold


    Original     		PDF MS1009 MS1009 Temperatu15 136MHz 160MHz 175MHz j105 transistor J108 - TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: MS1581 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 25 VOLTS POUT = 4.0 WATTS GP = 7.0 dB MINIMUM GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1581 is a silicon NPN bipolar transistor specifically


    Original     		PDF MS1581 MS1581

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630

    PNP 2GHz LNA

    Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
    Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630

    Untitled

    Abstract: No abstract text available
    Text: MS1531 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 25 VOLTS CLASS A OPERATION POUT = 4 WATTS GP = 8.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1531 is a gold metallized NPN silicon bipolar transistor


    Original     		PDF MS1531 MS1531

    MS2613

    Abstract: J225 20 watts transistor s-band
    Text: MS2613 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features • • • • • • 3.1 – 3.5 GHz 30 VOLTS POUT = 5.0 WATTS GP = 5.2 dB GAIN MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2613 is a high power silicon bipolar NPN transistor


    Original     		PDF MS2613 MS2613 500mA J225 20 watts transistor s-band

    transistor J9

    Abstract: No abstract text available
    Text: MS2619 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features • • • • • • 2.9 – 3.1 GHz 42 VOLTS INPUT/OUTPUT MATCHING POUT = 105 WATTS GP = 6.2 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2619 is a high power silicon bipolar NPN transistor


    Original     		PDF MS2619 MS2619 3100GHz transistor J9

    MS1584

    Abstract: No abstract text available
    Text: MS1584 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • • 470 - 860 MHz 28 VOLTS POUT = 50 WATTS GP = 6.5 dB MINIMUM INTERNAL INPUT MATCHING CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1584 is a silicon NPN bipolar transistor specifically


    Original     		PDF MS1584 MS1584 200mA 250mA

    H31D

    Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
    Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS


    Original     		PDF IEDM2006,

    m-pulse tunnel diode

    Abstract: Mp2407 MP4033 MP2923 M-PULSE
    Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF

    resonator B69500-A9107 siemens

    Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
    Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active


    Original     		PDF BFP405 resonator B69500-A9107 siemens microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses

    MP42141

    Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X
    Text: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available


    Original     		PDF MP42141 MP42141 MP42141-509 RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X

    MMIC Amplifier Micro-X marking 420

    Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices


    Original     		PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		PDF ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ggm 1"KM HEW LETT-PACKARD/ C MP NT S b lE D • 4447564 D0 1 0 1 2 5 T21 MSA-0885 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers H EW LETT PACKARD Features 85 Plastic Package • • GROUND • • ■HPA Usable Gain to 6.0 GHz


    OCR Scan     		PDF MSA-0885 MSA-0885

    AVANTEK MSA

    Abstract: avantek microwave AVANTEK MSA-0370-11 AVANTEK MSA-0
    Text: d a ta sh eet SÜE D AVANTEK INC 0A V A N TEK C MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 T 7 4 w3 - oi Avantek Chip Outline1 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB typical at 0.1 GHz


    OCR Scan     		PDF MSA-0800 MSA-0800 amplifier36 AVANTEK MSA avantek microwave AVANTEK MSA-0370-11 AVANTEK MSA-0

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CMPNTS Thai HEW I-E T T 1"KM blE D • 4 4 4 7 S Ö 4 0 0 1 D 1 2 3 15^ PACKARD 70 mil Package Features • • • • I HP A MSA-0870 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Usable Gain to 6.0 GHz


    OCR Scan     		PDF MSA-0870 MSA-0870

    Untitled

    Abstract: No abstract text available
    Text: avantek MSA-0870 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 70 mil Package Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz


    OCR Scan     		PDF MSA-0870

    Untitled

    Abstract: No abstract text available
    Text: mar dam sheet 0 1992 0A VA N TEK MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Avantek Chip Outline1 Features • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz


    OCR Scan     		PDF MSA-0800 MSA-0800