SILICON BIDIRECTIONAL DIAC Search Results

Contextual Info: BR100/03LLD . BR100/04LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Version 2004-10-01 Breakover voltage Durchbruchsspannung Plastic case MiniMELF Kunststoffgehäuse MiniMELF

50Hz sine wave generator

Abstract: 50hz sine generator xenon ignitor sidac ignitor xenon DIACS xenon lamp igniter NTE6416 NTE6419 Sine Wave Generator
Contextual Info: NTE6415 thru NTE6419 Bidirectional Thyristor Diodes SIDAC Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding

Contextual Info: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at

DIAC DB3

Abstract: diac DB3 Do 35 diac 083
Contextual Info: SILICON BIDIRECTIONAL DIAC DB3 TECHNICAL SPECIFICATION FEATURES VOLTAGE 32 Volts VBO typ. 32V typical breakover voltage CURRENT 100 µAmps (IBO max.) Low breakover current at breakover voltage Three layer, hermetically sealed body DIMENSIONS - millimeters (inches)

Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at

bl db3 galaxy

Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

DB6 106 diode

Abstract: DC34 diode db6
Contextual Info: DB3-DB6 SILICON BIDIRECTIONAL DIAC FEATURE DO-35 GLASS The three layer ,two terminal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They 0.079(2.0) MAX demonstrate low breakover current at breakover voltage as DIA

diac triac control circuit motor

Abstract: diac with triac DIAC-Triac DIAC-Triac applications datasheet DIAC bidirectional diode thyristor diac DIAC DIAC-Triac full wave phase control applications diac data sheet diac triac
Contextual Info: LSDB3, LSDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.

Contextual Info: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO - 35 FEATURES ●Three way layer two terminal, axial lead , .020 TYP. 0.51 hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current.

bl db3 galaxy

Abstract: bl db3 db3 bl DIACs
Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

diac triac control circuit motor

Abstract: DIAC-Triac full wave phase control applications DIAC-Triac applications datasheet DIAC diac with triac diac DIAC-Triac thyristor motor speed control circuit DIACS DIAC EQUIVALENT circuit
Contextual Info: LLDB3, LLDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.

DB3 ST

Abstract: DIACS Low Voltage DIACs thyristor motor speed control circuit DIACS low current universal MOTOR speed control DC34 ST DB3
Contextual Info: DB3, DB4, DC34 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse

DIAC

Abstract: diac 5v diac 5v vbo datasheet DIAC br 100 diac DIAC 100/03 DIAC thyristor DIAC BR 100 diac vbo 10V semikron thyristor
Contextual Info: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF

DIAC

Abstract: datasheet DIAC DIAC EQUIVALENT circuit diac 5v vbo DIAC EQUIVALENT diac terminals diac 5v vbo-35 bidirectional diode thyristor diac DIAC DATASHEET
Contextual Info: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF

Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

bl db3 galaxy

Abstract: db3 bl 100HZ 05R05 DB3 galaxy
Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

DB3 ST

Abstract: diac db3 db3 diac range EQUIVALENT NO. OF DB3 DIAC db3 diac DIAC-Triac datasheet DIAC diac DB3 application note DIAC BR 100 DIAC-Triac applications
Contextual Info: DB3, DB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.

diode DB3

Abstract: db6 do-35 diac 083 diagram DC34
Contextual Info: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURE DO-35 GLASS The three layer ,two terminal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They 0.079(2.0) MAX demonstrate low breakover current at breakover voltage as

SILICON BIDIRECTIONAL DIAC

Contextual Info: TM Micro Commercial Components SILICON BIDIRECTIONAL DIAC MCC Part Number Breakover Voltage Repetitive Peak OnState Current @ f=100HZ Output Voltage Breakover Current Breakover Voltage Symmetry Rise Time VBO ITRM @ TP VO IBO max |+VBO| - |-VBO| Tr V mA V

05R05

Contextual Info: DB3M.DB4M SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES MINI-MELF Cathode indification φ1 .5±0.1 The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break

DIAC-Triac applications

Abstract: diac DIAC-Triac full wave phase control applications DIAC-Triac DIAC-Triac* 120v triac and diac diac with triac bidirectional diode thyristor diac diac triac diac triac control circuit motor
Contextual Info: LSDB-3, LSDB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover

diac marking

Abstract: DIAC 220v
Contextual Info: DB3MJ Silicon Bidirectional Diac VOLTAGE RANGE: 28-36 V SMAJ 4.3±0.1 2.6±0.15 1.70±0.25 Features The three layer,two termnal,axial lead,hermetically 11 11sealed diacs are designed specifically for triggering 111 1thyristors.They demonstrate low breakover current at

Contextual Info: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

DIAC DB3

Abstract: db3 diac number diac DIAC db4 diac
Contextual Info: MCC TM Micro Commercial Components SILICON BIDIRECTIONAL DIAC MCC Part Number Breakover voltage VBO V Repetitive Peak OnState Current @ f=100HZ ITRM @ TP A us Output Voltage Breakover Current Breakover Voltage Symmetry Rise Time VO V IBO max µA |+VBO| - |-VBO|