DIAGRAM Search Results

Contextual Info: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against

Toshiba TB 1230 N

Abstract: TMPZ84C011 TMPZ84C011A TMP284C011 FO34
Contextual Info: TOSHIBA TMPZ84C011A 3. OPERATIONAL DESCRIPTIONS 3.1 ENTIRE BLOCK DIAGRAM AND OPERATION OF EACH BLOCK 3.1.1 Entire Block Diagram 110489 Figure 3.1.1 Entire Block Diagram MPUZ80-302 TOSHIBA TMPZ84C011A 3.1.2 Operation of Each Block The TMPZ84C011A largely consists of a processor MPU , a counter/timer circuit

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. 2 .0 0 8 REF .402 TYP 4 .748 .256 .602 .205 0 .0 4 0 TYP 12 D :^e > d= d : H W >.125 — 1 0.1 1 c $•255 .249 B DIAGRAM S OOKING

toshiba TLC

Abstract: TMPZ84C013 TMPZ84C013A sbc 486 rf traNsmitter receiver 12mhz Equivalent TLC 372 CP ic la 339 R7EH TMPZ84C LC 3514-A
Contextual Info: TOSHIBA TMPZ84C013A 3. OPERATIONAL DESCRIPTION 3.1 BLOCK D IAG RA M AND O PERATIO NAL OUTLINE 3.1.1 Block Diagram C LKO U T XTAL1 } CLKIN CLK M SI MS2 EV L_ HALT Ml ÑMÍ Controller RESET BÜSACK i M REQ HALT MI CGC NMI NMI BÜSREQ J CLK INT R ESET -^> RESET

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. A D DIM P 1 MOD PLUG (P 2 ) MOD PLUG B WIRING DIAGRAM 568A A AMP 1 4 7 1 -9 REV 31MAR2000 I150C T2001 11:22am H :\e d m m o d \2 1 9 2 4 2 _ c .d w q

1525B

Contextual Info: y UNITRODE C UC1525B UC1527B UC2525B UC2527B UC3525B UC3527B Regulating Pulse Width Modulators FEATURES Tighter Reference Specifications BLOCK DIAGRAM VREF O SC OUT 7/95 3-59 SUPPLY POWER • DESCRIPTION The UC1525B/1527B series of pulse width modulator integrated circuits are

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. 7.1 1 D C FSMRA5J —INDICATES MOMENTARY POSITION CIRCUIT CHARACTERISTICS CONTACT POSITION CIRCUIT DIAGRAM A > OFF AMP 4805 REV 31MAR2000

Contextual Info: S E M I C O N D U C T O P I N C 7QS1 :0 M P U T ING AND NETWORKING Figure 1. Block Diagram VOO T1 CLKIN GA1210E FBIN EN2 INV1 Data Sheets Clock Doubter/ Two-Phase Generator Features • 2X clock multiple generator TriQuint’s GA1210E is a low -skew TTL-level clock doubler chip. It produces m ultiple clock

Contextual Info: PRELIMINARY Figure 1. Block Diagram TQ2061 High-Frequency Clock Generator Features » Output frequency range: 500 MHz to 600 MHz » One differential PECL output: 600 m V min swing * Common-mode voltage: VDD-1 .2 V (max), VDD-1 .6 V(m in) * Period-to-period output jitter:

J027

Abstract: TGA49
Contextual Info: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

31RF

Contextual Info: HMJ5 High Dynamic Range FET Mixer Product Features Product Information Functional Diagram Product Description • +35 dBm IIP3 • No external matching element Required • RF 40 - 1000 MHz • LO 30 - 900 MHz • IF 5 - 250 MHz • +17 dBm LO Drive Level

TQP7M9104

Abstract: Nelco N4000-13 0603CS-R12XJL b919 recommended land pattern for 6032 cap jedec 0603
Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

7M9102

Abstract: schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9 TQP7M9102
Contextual Info: TQP7M9102 ½W High Linearity Amplifier Applications • •   Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features          Functional Block Diagram 400-4000 MHz

Contextual Info: TQM7M5012 Data Sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram • • • • • • • • • • • Ultra-small 5x5mm form factor GSM/EDGE Multi-Mode Capability - 90 dBm Typical Rx Noise - 38 dBc Typical ACPR 200KHz

FR4 dielectric

Contextual Info: 856934 1842.5 MHz SAW Filter Applications General purpose wireless Wireless infrastructure 3G, 4G, Multi-standard Repeaters Product Features Functional Block Diagram Top view Usable bandwidth 75 MHz Low loss Excellent power handling Single-ended operation

Contextual Info: TGA4532-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-band Sat-Com QFN 4x4mm 20L Product Features • • • • • • • • Functional Block Diagram Frequency Range: 17.7 – 19.7 GHz Power: 32.5 dBm Psat, 31 dBm P1dB Gain: 23 dB

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

Contextual Info: TQM679002A Data Sheet 802.11b/g/n WLAN/BT Front-End Module Features Block Diagram BTSW RXSW TXSW • Rxp Rxn PABC Balun ANT   PAEN Tx in Pdetect    PA  Directional Detector BTH Fully Integrated, 802.11b/g/n + BT front-end module Internally matched input/output

TGA4512-SM

Abstract: RO4003 Ka-band
Contextual Info: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB

0603af

Abstract: 37dBmV
Contextual Info: TGA2807-SM CATV Ultra Linear Gain Amplifier Applications •  CATV EDGE QAM Cards CMTS Equipment 28-pin 5x5 mm QFN Package Product Features            Functional Block Diagram 40-1000 MHz Bandwidth DOCSIS 3.0 Compliant ACPR: -69 dBc at 61 dBmV Pout