SIHL620 Search Results
SIHL620 Price and Stock
Vishay Siliconix SIHL620STRL-GE3LOGIC MOSFET N-CHANNEL 200V |
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SIHL620STRL-GE3 | Cut Tape | 776 | 1 |
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Vishay Siliconix SIHL620S-GE3LOGIC MOSFET N-CHANNEL 200V |
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SIHL620S-GE3 | Tube | 686 | 1 |
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Vishay Intertechnologies SIHL620STRL-GE3LOGIC MOSFET N-CHANNEL 200V (Alt: SIHL620STRL-GE3) |
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SIHL620STRL-GE3 | 111 Weeks | 800 |
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SIHL620STRL-GE3 | Bulk | 800 |
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Vishay Intertechnologies SIHL620S-GE3LOGIC MOSFET N-CHANNEL 200V (Alt: SIHL620S-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHL620S-GE3 | 111 Weeks | 1,000 |
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SIHL620S-GE3 | Bulk | 1,000 |
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SIHL620S-GE3 | 1 |
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SIHL620 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHL620S-GE3 | Vishay Siliconix | LOGIC MOSFET N-CHANNEL 200V | Original | |||
SIHL620STRL-GE3 | Vishay Siliconix | LOGIC MOSFET N-CHANNEL 200V | Original |
SIHL620 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRL620
Abstract: SiHL620 SiHL620-E3 IRL620PBF
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Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 11-Mar-11 IRL620 SiHL620-E3 IRL620PBF | |
SiHL620
Abstract: SiHL620-E3 IRL620PBF IRL620
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Original |
IRL620, SiHL620 O-220 O-220 18-Jul-08 SiHL620-E3 IRL620PBF IRL620 | |
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 11-Mar-11 | |
Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRL620S, SiHL620S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11 | |
Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRL620S, SiHL620S 2002/95/EC O-263) 18-Jul-08 | |
Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRL620S, SiHL620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
AN609
Abstract: IRL620 SiHL620 308-196
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Original |
IRL620 SiHL620 AN609, 5620m 0814m 9024m 5573m 5593m 9530m 2863m AN609 308-196 | |
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive |
Original |
IRL620, SiHL620 O-220 O-220 12-Mar-07 | |
Contextual Info: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11 | |
SiHL620S
Abstract: 52a21
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Original |
IRL620S, SiHL620S SMD-220 12-Mar-07 52a21 | |
SiHL620S
Abstract: IRL620S SiHL620S-E3
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Original |
IRL620S, SiHL620S O-263) 18-Jul-08 IRL620S SiHL620S-E3 | |
Contextual Info: IRL620S_RC, SiHL620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRL620S SiHL620S AN609, CONFIGURAp-10 5704m 0740m 9202m 5574m | |
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IRL620PBF
Abstract: 52A21
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Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL620PBF 52A21 | |
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
SiHL620S
Abstract: IRL620S SiH530S-E3 SiH530STR SMD-220 IRL530STRR SMD DIODE marking AB
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Original |
IRL620S, SiHL620S SMD-220 SMD-220 18-Jul-08 IRL620S SiH530S-E3 SiH530STR IRL530STRR SMD DIODE marking AB | |
SiHL620-E3Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHL620-E3 | |
part marking ab
Abstract: IRL620 SiHL620 SiHL620-E3 D3118
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IRL620, SiHL620 O-220 O-220 18-Jul-08 part marking ab IRL620 SiHL620-E3 D3118 | |
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive |
Original |
IRL620, SiHL620 2002/95/EC O-220 18-Jul-08 | |
Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated |
Original |
IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |