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Vishay Siliconix SIHG460B-GE3 MOSFET N-CH 500V 20A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG460B-GE3	Tube			500	1 - 10 - 100 - 1000 $1.91446 10000 $1.91446	Buy Now
Vishay Intertechnologies SIHG460B-GE3 Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG460B-GE3				1	1 $2.88 10 $2.6 100 $2.06 1000 $1.92 10000 $1.92	Get Quote
Vishay Intertechnologies SIHG460BGE3 D SERIES POWER MOSFET Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHG460BGE3		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHG460B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHG460B-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 20A TO-247AC		Original	PDF

SIHG460B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS V at TJ max. 550 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 170 Qgs (nC) 14 Qgd (nC) - Reduced Capacitive Switching Losses	Original	PDF	IRFP460B, SiHG460B O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFP460B Abstract: No abstract text available Text: IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS V at TJ max. 550 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 170 Qgs (nC) 14 Qgd (nC) - Reduced Capacitive Switching Losses	Original	PDF	IRFP460B, SiHG460B O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP460B
Untitled Abstract: No abstract text available Text: IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS V at TJ max. 550 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 170 Qgs (nC) 14 Qgd (nC) - Reduced Capacitive Switching Losses	Original	PDF	IRFP460B, SiHG460B O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS V at TJ max. 550 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 170 Qgs (nC) 14 Qgd (nC) - Reduced Capacitive Switching Losses	Original	PDF	IRFP460B, SiHG460B O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS V at TJ max. 550 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 170 Qgs (nC) 14 Qgd (nC) - Reduced Capacitive Switching Losses	Original	PDF	IRFP460B, SiHG460B O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	PDF	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. HIGH-VOLTAGE MOSFETs E SERIES HIGH VOLTAGE 500 V, 600 V, and 650 V Super Junction N-Channel MOSFETs D SERIES HIGH VOLTAGE 400 V, 500 V, and 600 V Stripe Technology N-Channel MOSFETs www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C .	Original	PDF	SiHx12N50E SiHx15N50E SiHx20N50E SiHx25N50E O-247 O-247AC O-220 O-220 O-220AB O-263)