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    SIHG25N50E Price and Stock

    Vishay Siliconix SIHG25N50E-GE3

    MOSFET N-CH 500V 26A TO247AC
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    DigiKey SIHG25N50E-GE3 Tube 500
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    • 1000 $1.86742
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    Vishay Intertechnologies SIHG25N50E-GE3

    N-CHANNEL 500V - Bulk (Alt: SIHG25N50E-GE3)
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    Avnet Americas SIHG25N50E-GE3 Bulk 23 Weeks 500
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    • 1000 $1.7048
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    Mouser Electronics SIHG25N50E-GE3
    • 1 $3.71
    • 10 $3.12
    • 100 $2.52
    • 1000 $1.98
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    Newark SIHG25N50E-GE3 Bulk 480 1
    • 1 $4.02
    • 10 $3.43
    • 100 $2.83
    • 1000 $2.29
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    TME SIHG25N50E-GE3 1
    • 1 $3.41
    • 10 $2.83
    • 100 $2.29
    • 1000 $2.1
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    EBV Elektronik SIHG25N50E-GE3 20 Weeks 25
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    Vishay Intertechnologies IRFP31N50LPBF

    MOSFETs TO247 500V 31A N-CH MOSFET
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    TTI IRFP31N50LPBF Tube 2,000 25
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    • 100 $4.17
    • 1000 $4.17
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    Vishay Intertechnologies IRFP32N50KPBF

    MOSFETs TO247 500V 32A N-CH MOSFET
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    TTI IRFP32N50KPBF Tube 500
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    • 1000 $4.97
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    Vishay Intertechnologies SIHG25N50EGE

    E SERIES POWER MOSFET Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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    ComSIT USA SIHG25N50EGE 500
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    SIHG25N50E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG25N50E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-247AC Original PDF

    SIHG25N50E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		PDF SiHG25N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		PDF SiHG25N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and


    Original     		PDF SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E