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Vishay Siliconix SIHFS9N60A-GE3 MOSFET N-CH 600V 9.2A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHFS9N60A-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.95579 10000 $0.95579	Buy Now
Vishay Intertechnologies SIHFS9N60A-GE3 MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFS9N60A-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFS9N60A-GE3	Reel		13 Weeks	1,000	1 - 10 - 100 - 1000 $0.8722 10000 $0.81294	Buy Now
Mouser Electronics	SIHFS9N60A-GE3		850			1 $2.06 10 $1.71 100 $1.37 1000 $0.932 10000 $0.863	Buy Now
TTI	SIHFS9N60A-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.89 10000 $0.86	Buy Now
TME	SIHFS9N60A-GE3				1	1 $2.17 10 $1.96 100 $1.55 1000 $1.45 10000 $1.45	Get Quote
EBV Elektronik	SIHFS9N60A-GE3			14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHFS9N60A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHFS9N60A-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.2A TO263		Original	PDF

SIHFS9N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFS9N60APBF Abstract: IRFS9N60A SiHFS9N60A SiHFS9N60A-E3 Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	PDF	IRFS9N60A, SiHFS9N60A O-263) 18-Jul-08 IRFS9N60APBF IRFS9N60A SiHFS9N60A-E3
Untitled Abstract: No abstract text available Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 18-Jul-08
Untitled Abstract: No abstract text available Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11
IRFS9N60A Abstract: SiHFS9N60A SiHFS9N60A-E3 IRFS9N60APBF Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11 IRFS9N60A SiHFS9N60A-E3 IRFS9N60APBF
IRFS9N60A Abstract: IRFS9N60APBF SiHFS9N60A SiHFS9N60A-E3 s09 355 Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	PDF	IRFS9N60A, SiHFS9N60A O-263) 18-Jul-08 IRFS9N60A IRFS9N60APBF SiHFS9N60A-E3 s09 355
Untitled Abstract: No abstract text available Text: IRFS9N60A_RC, SiHFS9N60A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFS9N60A SiHFS9N60A AN609, 5126m 6185m 3182m 5507m 4788m
Untitled Abstract: No abstract text available Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	PDF	IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11