IRFPF30
Abstract: SiHFPF30
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
O-247
O-247
18-Jul-08
IRFPF30
|
Untitled
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
2002/95/EC
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
O-247
O-247
O-220
12-Mar-07
|
Untitled
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
2002/95/EC
O-247AC
O-247AC
O-220AB
11-Mar-11
|
AN609
Abstract: IRFPF30 SiHFPF30
Text: IRFPF30_RC, SiHFPF30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRFPF30
SiHFPF30
AN609,
07-Jul-10
AN609
|
Untitled
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
IRFPF30
Abstract: SiHFPF30
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
O-247
O-247
18-Jul-08
IRFPF30
|
IRFPF30
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
IRFPF30
|