SIHFPE30 Search Results
SIHFPE30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
IRFPE30Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC O-220AB O-247AC 11-Mar-11 IRFPE30 | |
IRFPE30Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30 | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 O-247 O-247 O-220 12-Mar-07 | |
IRFPE30Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30 | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC O-247AC O-220AB 11-Mar-11 | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
44-1070Contextual Info: IRFPE30_RC, SiHFPE30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRFPE30 SiHFPE30 AN609, 06-Jul-10 44-1070 | |
IRFPE30Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30 |