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SIHFIB5N65A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRFIB5N65A_RC, SiHFIB5N65A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFIB5N65A SiHFIB5N65A AN609, 21-May-10	PDF
SiHFIB5N65A Abstract: IRFIB5N65A Contextual Info: IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage	Original	IRFIB5N65A, SiHFIB5N65A 2002/95/EC O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFIB5N65A	PDF
SIHFIB5N65A Abstract: IRFIB5N65A SiHFIB5N65A-E3 Contextual Info: IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage	Original	IRFIB5N65A, SiHFIB5N65A 2002/95/EC O-220 18-Jul-08 IRFIB5N65A SiHFIB5N65A-E3	PDF
SiHFIB5N65A Abstract: IRFIB5N65A 4.5v to 100v input regulator SiHFIB5N65A-E3 Contextual Info: IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage	Original	IRFIB5N65A, SiHFIB5N65A 2002/95/EC O-220 11-Mar-11 IRFIB5N65A 4.5v to 100v input regulator SiHFIB5N65A-E3	PDF
SiHFIB5N65A Abstract: IRFIB5N65A Contextual Info: IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage	Original	IRFIB5N65A, SiHFIB5N65A 2002/95/EC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFIB5N65A	PDF
4.5v to 100v input regulator Abstract: SiHFIB5N65A IRFIB5N65A Contextual Info: IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage	Original	IRFIB5N65A, SiHFIB5N65A 2002/95/EC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4.5v to 100v input regulator IRFIB5N65A	PDF
IRFB9N65 Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFB9N65	PDF
Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFB9N65A applications Abstract: IRFB9N65A SiHFIB5N65A SiHFB9N65A SiHFB9N65A-E3 smps power Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	IRFB9N65A, SiHFB9N65A O-220 18-Jul-08 IRFB9N65A applications IRFB9N65A SiHFIB5N65A SiHFB9N65A-E3 smps power	PDF
Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFB9N65A Abstract: SiHFB9N65A SiHFB9N65A-E3 SiHFIB5N65A IRFB9N65 Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 11-Mar-11 IRFB9N65A SiHFB9N65A-E3 SiHFIB5N65A IRFB9N65	PDF
s-81243 Abstract: SiHFIB5N65A Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	IRFB9N65A, SiHFB9N65A O-220 O-220 IRFB9N65APbFmerchantability, 12-Mar-07 s-81243 SiHFIB5N65A	PDF
Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 11-Mar-11	PDF