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Catalog Datasheet	MFG & Type	PDF	Document Tags
SiHFI640G Abstract: No abstract text available Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFI640G Abstract: IRFI640 SiHFI640G Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI640G IRFI640
SiHFI640G Abstract: IRFI640G SiHFI640G-E3 Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 11-Mar-11 IRFI640G SiHFI640G-E3
SiHFI640G Abstract: No abstract text available Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFI640G Abstract: IRFI640G_RC, SiHFI640G_RC transistor c 6093 IRFI640 SIHFI640G AN609 90446 Text: IRFI640G_RC, SiHFI640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFI640G SiHFI640G AN609, 06-May-10 IRFI640G_RC, SiHFI640G_RC transistor c 6093 IRFI640 AN609 90446
IRFI640G Abstract: SiHFI640G SiHFI640G-E3 59AB Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 18-Jul-08 IRFI640G SiHFI640G-E3 59AB
59AB Abstract: SiHFI640G SiHFI640G-E3 IRFI640G irfi640gpbf Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 18-Jul-08 59AB SiHFI640G-E3 IRFI640G irfi640gpbf
SiHFI640G Abstract: No abstract text available Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 12-Mar-07