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Catalog Datasheet	MFG & Type	PDF	Document Tags
9014 transistor specification Abstract: AN609 IRFBE20 SiHFBE20 Text: IRFBE20_RC, SiHFBE20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFBE20 SiHFBE20 AN609, 20-Apr-10 9014 transistor specification AN609
IRFBE20 Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRFBE20, SiHFBE20 O-220 12-Mar-07 IRFBE20
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFBE20 Abstract: IRFBE20PbF SiHFBE20 SiHFBE20-E3 Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRFBE20, SiHFBE20 O-220 O-220 18-Jul-08 IRFBE20 IRFBE20PbF SiHFBE20-E3
IRFBE20 Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBE20
IRFBE20 Abstract: SiHFBE20 SiHFBE20-E3 d1758 Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE20 SiHFBE20-E3 d1758
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
n 332 ab Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 n 332 ab
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer 家庭用電化製品エアコン 4 IH調理器 5 洗濯機 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay	Original	PDF	VMN-MS6792-1304-CNCH
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Home Appliances Air Conditioners Induction Cooking Washing Machines 4 5 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay	Original	PDF	VMN-MS6761-1212