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    Superxon SOGX6299-ISIGE

    XGS-PON&GPON COMBO OLT SFP-DD B+
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    DigiKey SOGX6299-ISIGE Tray 5 1
    • 1 $244.79
    • 10 $214.912
    • 100 $214.912
    • 1000 $214.912
    • 10000 $214.912
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    ATGBICS ONS-SI-GE-SX-C

    Compatible SFP 1000Mb
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ONS-SI-GE-SX-C 1
    • 1 $28
    • 10 $28
    • 100 $26.6
    • 1000 $23.8
    • 10000 $23.8
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    Karl Kruse GmbH & Co KG ONS-SI-GE-SX-C 14
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    ATGBICS ONS-SI-GE-ZX-C

    Compatible SFP 1000Mb
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ONS-SI-GE-ZX-C 1
    • 1 $57
    • 10 $57
    • 100 $54.2
    • 1000 $48.5
    • 10000 $48.5
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    Karl Kruse GmbH & Co KG ONS-SI-GE-ZX-C 32
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    ATGBICS ONS-SI-GE-LX-C

    Compatible SFP 1000Mb
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    DigiKey ONS-SI-GE-LX-C 1
    • 1 $31
    • 10 $31
    • 100 $29.5
    • 1000 $26.4
    • 10000 $26.4
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    Karl Kruse GmbH & Co KG ONS-SI-GE-LX-C 16
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    Amphenol ProLabs ONS-SI-GE-LX-C

    Cisco ONS-SI-GE-LX Compatible TA
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    DigiKey ONS-SI-GE-LX-C 1
    • 1 $50
    • 10 $50
    • 100 $47.5
    • 1000 $50
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    SIGE Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D602 SiGe Semiconductor 3V, 6GHz Divide-by-2 Static Prescaler Final Original PDF
    D602 SiGe Semiconductor 3V, 6GHz Divide-by-2 Static Prescaler Original PDF
    D602-EV SiGe Semiconductor Development Tools, 3V, 6GHz Divide-by-2 Static Prescaler Evaluation kit Original PDF
    D602-R SiGe Semiconductor 3V, 6GHz Divide-by-2 Static Prescaler Original PDF
    LPT16ED SiGe Semiconductor 30 GHz SiGe Bipolar Transistor Final Original PDF
    PA2423 SiGe Semiconductor 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Original PDF
    PA2423G SiGe Semiconductor 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Original PDF
    PA2423G SiGe Semiconductor 2.4 GHz Power Amplifier IC Original PDF
    PA2423G-EV SiGe Semiconductor 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Original PDF
    PA2423G-EV SiGe Semiconductor Development Tools, 2.4GHz Power Amplifier IC Evaluation kit Original PDF
    PA2423L SiGe Semiconductor 2.4 Ghz Bluetooth Class 1 Power Amplifier Ic Preliminary Information Original PDF
    PA2423L SiGe Semiconductor Audio Amplifier, Range Charger 2.4 GHz Power Amplifier IC Original PDF
    PA2423L SiGe Semiconductor 2.4 GHz Power Amplifier IC Original PDF
    PA2423L-EV SiGe Semiconductor 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Original PDF
    PA2423L-EV SiGe Semiconductor Development Tools, 2.4GHz Power Amplifier IC Evaluation kit Original PDF
    PA2423L-R SiGe Semiconductor Audio Amplifier, Range Charger 2.4 GHz Power Amplifier IC Original PDF
    PA2423L-R SiGe Semiconductor 2.4 GHz Power Amplifier IC Original PDF
    PA2423MB SiGe Semiconductor 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Original PDF
    PA2423MB SiGe Semiconductor Audio Amplifier, 2.4GHz Power Amplifier IC Original PDF
    PA2423MB SiGe Semiconductor 2.4GHz Power Amplifier IC Original PDF

    SIGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    XPOSYS

    Abstract: Germanium Transistor X-GOLD
    Text: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    BGB707L7ESD BGB707L7ESD 726-BGB707L7ESDE6327 707L7ESD E6327 XPOSYS Germanium Transistor X-GOLD PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the


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    PC8240T6N PC8240T6N PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA-4563 Z SGA-4563(Z) DC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


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    SGA-4563 2500MHz, OT-363 31mil DS091118 SGA-4563 PDF

    Buffer Amplifier Ghz

    Abstract: THM2004J
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


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    THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Buffer Amplifier Ghz PDF

    QUBiC4X

    Abstract: BGU7003 BFU725F
    Text: NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices,


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    BGU7003 110-GHz OT891 QUBiC4X BFU725F PDF

    GSM 900, 1800, 1900 max power diagram

    Abstract: TST0911 TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
    Text: TST0911 Dualband SiGe Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based


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    TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 20-Sep-00 GSM 900, 1800, 1900 max power diagram TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935 PDF

    SSO20

    Abstract: T7024 T7024-DB T7024-PGQ T7024-PGS T7024-TRQ T7024-TRS
    Text: T7024 ISM 2.4 GHz Front End IC Description The T7024 is a monolithic SiGe transmit/ receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth, DECT, IEE 802.11 FHSS


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    T7024 T7024 D-74025 04-Sep-00 SSO20 T7024-DB T7024-PGQ T7024-PGS T7024-TRQ T7024-TRS PDF

    Untitled

    Abstract: No abstract text available
    Text: S e m i c o n d u c t o r s «J / V V fJ U DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT.


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    U7004B SS020 10-Mar-98 D-74025 PDF

    ATMEL 935

    Abstract: SMD 6 PIN IC VCC GND TST0912 TST0912-TJQ TST0912-TJS
    Text: TST0912 SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ Silicon-Germanium SiGe technology and has been designed for use in GSM 900-MHz mobile phones.


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    TST0912 TST0912 900-MHz D-74025 28-Sep-00 ATMEL 935 SMD 6 PIN IC VCC GND TST0912-TJQ TST0912-TJS PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U7006B S e m i c o n d u c t o r s DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-Q matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due


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    U7006B U7006B D-74025 07-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic TST0911 S e m i c o n d u c t o r s Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based


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    TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 14-Apr-99 PDF

    HFA3783

    Abstract: ISL3984 ISL3984IR ISL3984IR96 TB379 TB389 HFA3863 prism 2.5
    Text: ISL3984 Data Sheet July 2003 FN4862.6 2.4GHz Power Amplifier and Detector Features The ISL3984 is a 2.4GHz monolithic SiGe power amplifier designed to operate in the ISM band. It features two low-voltage single supply stages. Cascaded, they deliver 18dBm Typical output power for the


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    ISL3984 FN4862 ISL3984 18dBm -30dBc, -50dBc) -50dBc HFA3783 ISL3984IR ISL3984IR96 TB379 TB389 HFA3863 prism 2.5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium


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    TST0922 TST0922 D-74025 25-Mar-99 PDF

    AN-075

    Abstract: A64 marking amplifier MMIC A64 marking SGA-6486z SGA-6486 marking 64z MMIC "A64" marking
    Text: SGA-6486 Product Description The SGA-6486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes


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    SGA-6486 SGA-6486 AN-075 SGA-6486Z EDS-100615 AN-075 A64 marking amplifier MMIC A64 marking SGA-6486z marking 64z MMIC "A64" marking PDF

    BFU725F

    Abstract: BGU7003 SOT-891
    Text: NXP의 SiGe:C 공정이 BGU7003 낳은 광대역 LNA MMIC BGU7003 RF 고주파수 대역에서 뛰어난 수신감도 NXP의 최신 SiGe:C 공정으로 생산된 이 고주파 RF MMIC는 수신감도가 매우 우수하고 배터 리의 수명이 향상된 제품입니다. GaAs를 대체하는 실리콘 기반의 기기로서 비용 효율이 크고,


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    BGU7003 110-GHz OT891 BGU7003 BFU725F BFU725F SOT-891 PDF

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output


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    PD5754T7A R09DS0012EJ0100 PD5739T7A 28-pin 28-pnesas PDF

    SGC-4486Z

    Abstract: sgc- sot-86
    Text: SGC-4486Z SGC-4486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features RFMD’s SGC-4486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The


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    SGC-4486Z 50MHz 4000MHz 4000MHz OT-86 SGC-4486Z sgc- sot-86 PDF

    SDM-09060-B1F

    Abstract: TRANSISTORS BJT with low gate voltage NOTE-AN054
    Text: SDM-09060-B1F Y SDM-09060B1F(Y)Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features „ „ „ Available in RoHS Compliant


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    SDM-09060-B1F SDM-09060B1F AN054, EDS-104211 TRANSISTORS BJT with low gate voltage NOTE-AN054 PDF

    A64Z

    Abstract: SGA-6489 SGA-6489 A64Z MARKING A64 SOT-89 sga6489 a64 marking code 5.1 amplifier schematic A64 marking amplifier marking A64 SGA6489Z
    Text: SGA-6489 Z SGA-6489(Z) Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


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    SGA-6489 3500MHz, OT-89 SGA6489 SGA6489Z SGA-6489 SGA-6489Z A64Z SGA-6489 A64Z MARKING A64 SOT-89 a64 marking code 5.1 amplifier schematic A64 marking amplifier marking A64 PDF

    4463Z

    Abstract: SGC-4463Z
    Text: SGC-4463Z SGC-4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The


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    SGC-4463Z 50MHz 4000MHz OT-363 SGC-4463Z 1000pF EDS-104979 4463Z PDF

    SGB-2233Z

    Abstract: SGB-2233
    Text: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides


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    SGB-2233 16-Pin SGB-2233 SGB2233" SGB22Z" SGB-2233Z SGB-2233Z PDF

    SGB-6433Z

    Abstract: SGB-6433
    Text: SGB-6433 Z SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides


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    SGB-6433 16-Pin SGB6433" SGB64Z" SGB-6433Z SGB-6433 SGB-6433Z PDF

    "Gain Blocks"

    Abstract: Gain Blocks DC-3000 DB135 sga-55xx
    Text: RFMD SGA Gain Blocks Cascadable SiGe HBT MMIC Amplifiers RFMD’s series of SGA gain blocks are high-performance SiGe HBT MMIC amplifiers which operate from a single voltage supply. A Darlington configuration featuring 1 micron emitters provides high Ft and excellent thermal performance. Cancellation of emitter


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    NA-74xxZ DC-3000 "Gain Blocks" Gain Blocks DB135 sga-55xx PDF

    SGA-2386

    Abstract: SGA-2386Z rfmd mmic
    Text: SGA-2386 Z SGA-2386(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description Features The SGA-2386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


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    SGA-2386 5000MHz, OT-86 SGA-2386 SGA-2386Z EDS-100627 SGA-2386Z rfmd mmic PDF