transistor BC 245
Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the
|
Original
|
|
PDF
|
TDA 4600-2
Abstract: tda4600 BY360 Q63100-P2462-J29 TDA4601D tda4601 SMPS CIRCUIT DIAGRAM TDA 4600 class d amplifier tda Q63100 P2462-J29
Text: bGE D SIEMENS fl235bGS OOMTMbl EOb « S I E G SIEMENS AKTIENGESELLSCHAF -pStf-ll-31 Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic
|
OCR Scan
|
fl235bQS
Q67000-A2379
4601-D
Q67000-A2390
P-DIP-18-1
4601/D
A23Sb05
TDA 4600-2
tda4600
BY360
Q63100-P2462-J29
TDA4601D
tda4601 SMPS CIRCUIT DIAGRAM
TDA 4600
class d amplifier tda
Q63100
P2462-J29
|
PDF
|
BT diode
Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,
|
OCR Scan
|
|
PDF
|
10RJ
Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj
Text: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided
|
OCR Scan
|
235b05
04-3L9
BCY67
Q62702-C254
mb-25
10RJ
KCB05
F-05
Q62702-C254
510zma
5v 10rj
|
PDF
|
3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
|
OCR Scan
|
fl23SbOS
0G04737
BFX55
Q60206-X55
fl235bOS
3004x
Transistor BFX 59
634 transistor
bfx 63
63310-A
BFX55
D-10
Q60206-X55
Transistor BFX 90
BFX 79
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SFH6941T LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet i Package Dim ensions in mm FEATURES Transistor O ptocoupler In SO T223 Package End Stackable, 1.27 m m Spacing Low C urrent Input Very High CTR, 150% Typical at lF-1 m A, VCE*0 .S V
|
OCR Scan
|
SFH6941T
SFH6941T
|
PDF
|
702 Z TRANSISTOR
Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Text: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B
|
OCR Scan
|
702-F1250
IS21e
1S21/S
702 Z TRANSISTOR
BF 981
transistor Bf 981
Q62702-F1250
BF 145 transistor
marking LG
transistor Bf 979
|
PDF
|
5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
|
OCR Scan
|
BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 b 11.5 A l/bs 500 V ^bsion Package Ordering Code 0.5 n TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
|
OCR Scan
|
O-218
C67078-S3133-A2
235b05
O-218AA
A235bGS
|
PDF
|
SFH415 applications
Abstract: No abstract text available
Text: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES
|
OCR Scan
|
SFH416
SFH415
416-R
-SFH415
SFH416
SFH415 applications
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 64 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos /D ^DS on Package 1) Ordering Code BUZ 64 400 V 11.5 A 0.4 £2 TO-204 AA C67078-S1017-A2 Maximum Ratings Symbol Parameter Continuous drain current, Tc = 31 °C
|
OCR Scan
|
O-204
C67078-S1017-A2
23SbDS
DDb7T15
fl23Sb05
|
PDF
|
buz91a
Abstract: transistor buz91 C67078-S1342-A3 BUZ-91a 6C35
Text: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vbs 600 V h ff DS on Package Ordering Code 8A 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values
|
OCR Scan
|
O-220
C67078-S1342-A3
aH35fa05
35hds
buz91a
transistor buz91
C67078-S1342-A3
BUZ-91a
6C35
|
PDF
|
dm 0765
Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Text: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz
|
OCR Scan
|
Q62702-F1348
fl235b05
00b7253
dm 0765
BFQ196
siemens DM 321
VCE0518I
BFQ 244
cerec
|
PDF
|
DIODE S4 41
Abstract: diode zd 22
Text: SIEMENS BUZ 101SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS BUZ 101SL-4 55 V 4.1 A f f DS on Package Ordering Code 0.075 £1 P-DSO-28 C67078-S. . . . . . .
|
OCR Scan
|
101SL-4
VPS05123
101SL-4
P-DSO-28
C67078-S.
DIODE S4 41
diode zd 22
|
PDF
|
|
|
diode zd 48
Abstract: No abstract text available
Text: SIEMENS BUZ 103SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS BUZ 103SL-4 55 V 4.8 A f f DS on Package Ordering Code 0.055 £1 P-DSO-28 C67078-S. . . . . . .
|
OCR Scan
|
103SL-4
VPS05123
103SL-4
P-DSO-28
C67078-S.
diode zd 48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 205 • N channel • Enhancement mode • FREDFET Type Vos /d ^DS on Package 1> O rdering Code BUZ 205 400 V 6.0 A 1.0 £2 TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, Tc = 35 "C
|
OCR Scan
|
O-220
C67078-A1401-A2
535bDS
fl235fc
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 71 L Nat for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Yds b flbSfcn Package Ordering Code BUZ 71 L 50 V 14 A 0.1 n TO-220 AB C67078-S1326-A2 Maximum Ratings Symbol Parameter
|
OCR Scan
|
O-220
C67078-S1326-A2
023SbQS
|
PDF
|
DIODE S4 71
Abstract: DIODE S4 64 Siemens DIODE E 1220 BUZ 1025 SS 410
Text: SIEMENS BUZ 102S-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • d u /d i rated Type ^DS b f f DS on Package Ordering Code BUZ 102S-4 55 V 6.4 A 0.028 Q, P-DSO-28 C67078-S. . . . -A. Maximum Ratings
|
OCR Scan
|
102S-4
VPS05123
102S-4
P-DSO-28
C67078-S.
DIODE S4 71
DIODE S4 64
Siemens DIODE E 1220
BUZ 1025
SS 410
|
PDF
|
TDA 4600-2
Abstract: "if amplifier" siemens
Text: bOE D • SIEM ENS ê235hûS D O M m b l 20b « S I E G SIEMENS AKTIEN6ESELLSCHAF Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic
|
OCR Scan
|
Q67000-A2379
4601-D
Q67000-A2390
P-DIP-18-1
4601/D
fl23Sb05
DD414fl7
TDA4601;
TDA 4600-2
"if amplifier" siemens
|
PDF
|
transistor buz 19
Abstract: diode zd 12 diode zd 22 JS 8 diode
Text: SIEMENS BUZ 104SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS b f f DS on Package Ordering Code BUZ 104SL-4 55 V 3.2 A 0.125 Q P-DSO-28 C67078-S. . . . . . .
|
OCR Scan
|
104SL-4
VPS05123
104SL-4
P-DSO-28
C67078-S.
transistor buz 19
diode zd 12
diode zd 22
JS 8 diode
|
PDF
|
BSS97
Abstract: BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss
Text: SIEMENS SIPMOS Small-Signal Transistor VDS I D = 200 V = 1 .5 A ^ D S o n • • • BSS 97 = 2.0 Q N channel Enhancement mode Package: TO-202 ’ > Not for new design! Type O rdering code for version in bulk • BSS 97 Q 62702-S463 Maxim um Ratings
|
OCR Scan
|
O-202'
GPT05576
62702-S463
SIK02261
a23SbOS
BSS97
BSS 97
bss 97 transistor
LC-R121R3P
GPT05576
transistor bss
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 70 L • N channel • Enhancement mode • Avalanche-rated • Logic Level Type ^DS Id ^DS on Package 1> Ordering Code BUZ 70 L 60 V 12 A 0.15 Q TO-220 AB C67078-S1325-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 "C
|
OCR Scan
|
O-220
C67078-S1325-A2
|
PDF
|
CF739 R
Abstract: CF739 siemens gaas fet
Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain
|
OCR Scan
|
023ti3SQ
0G17342
CF739
00MHz
23b32ü
Q017347
CF739
CF739 R
siemens gaas fet
|
PDF
|
ic bsp 350
Abstract: No abstract text available
Text: SIEMENS SIPMOS Small-Signal Transistor BSP 17 Prelim inary D ata VDS = 50 V lD = 2.9 A ^DS onl = 0-1 Q • N channel • Enhancem ent m ode • A valanche-proof • Package: S O T -2 23 ' Type Ordering code for version on 12-m m tape BSP 17 Q 67000 -S 02 5
|
OCR Scan
|
|
PDF
|
