40673 MOSFET
Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E
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BF964
BF966
3SK107E
3SK107F
3SK107G
BF996S
40673 MOSFET
MFE131 mosfet
3SK77GR
3N159
40673
MPF201
MFE521
3SK77BL
3N200 MOSFET
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SIEMENS MICROWAVE RADIO
Abstract: Bosch radar GSM1800 GSM900 RG316U mercedes uwb radar
Text: Data sheet Rev 1.2 01.08.2009 Precompliance EMC Test Antenna HyperLOG 30xxx series Logarithmic Periodic Antenna. Spans 380MHz to 18GHz Ultimate functionality and elegant design at a revolutionary price Highlights: Only a single broadband antenna for the
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30xxx
380MHz
18GHz
DE-54597
SIEMENS MICROWAVE RADIO
Bosch radar
GSM1800
GSM900
RG316U
mercedes
uwb radar
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Heft 10
Abstract: MATSUA RELAIS Funkamateur Siemens Halbleiter
Text: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der
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Untitled
Abstract: No abstract text available
Text: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der
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80L14C
Abstract: dorman smith fuses 30H07C 10 M09C 106m1 3NW211 edison bs88 dorman smith 100 amp 4H07C l14c
Text: HRCII CURRENT LIMITING FUSES 600V a.c. or less, 250V d.c. 200,000 A.I.R. to CSA C22.2 No. 106 M92 Edison HRCII Fuses - Engineered for long life reliable protection. Non deteriorating silver plated links. High grade ceramic bodies. Plated external metalwork.
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106M1992.
L09C/M09C/P09C
K07C/K07CR/L14C/M14C
P11C/R11C
80L14C
dorman smith fuses
30H07C
10 M09C
106m1
3NW211
edison bs88
dorman smith 100 amp
4H07C
l14c
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FZH115B
Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P
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74INTEGRATED
Line-to-10
150ns
16-DIL
150ns
18-pin
250ns
300ns
FZH115B
fzh261
FZK105
FZH131
FZJ111
FZH115
FZH205
Multiplexer IC 74151
FZH265B
74LS104
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1121SAD
Abstract: Mototrola K 023 D004H PEB2252 D168H SFH0 6063-TS
Text: ICs for Communications DSP Embedded Line and Port Interface Controller DELIC-LC PEB 20570 Version 2.1 DELIC-PB PEB 20571 Version 2.1 Preliminary Data Sheet 2003-08 DS 1.1 PEB 20570 PEB 20571 Revision History: Current Version: 2003-08 Previous Version: 07.99
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16-channel
1121SAD
Mototrola K 023
D004H
PEB2252
D168H
SFH0
6063-TS
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IXYN 82N120C3
Abstract: 82N120C3 IXYN82N120C3 ixyn82n120 ixyn
Text: Advance Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous
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IXYN82N120C3
IC110
OT-227B,
E153432
82N120C3
IXYN 82N120C3
IXYN82N120C3
ixyn82n120
ixyn
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82N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous
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IXYN82N120C3
IC110
OT-227B,
E153432
82N120C3
2-13-12-A
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYB82N120C3H1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXYB82N120C3H1
PLUS264TM
IF110
82N120C3
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82N120C3
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN82N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous
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IC110
IXYN82N120C3
OT-227B,
E153432
82N120C3
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IXYH82N120C3
Abstract: DS100335
Text: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH82N120C3
IC110
O-247
062in.
82N120C3
IXYH82N120C3
DS100335
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYN82N120C3H1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient ±20 ±30 V
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IC110
IXYN82N120C3H1
OT-227B,
E153432
IF110
82N120C3
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TMT Isolator
Abstract: BR306 dioda switching photo transistor til 78 SFH609 F4183
Text: SIEMENS AKTIENGESELLSCHAF M7E D • 023SbOS D D 2 7 2 m S ■ SIEG 1=41-83 SIEMENS SFH609 SERIES HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package D im ensions in Inches m m 307(7 6) .291 {7 4) 35616 Sì 248(6 3) E Œ E 3 3 3 ANOCE [T k CATHODE [ Ï NCH
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fi23SbDS
D027214
F41-83
SFH609
Vceo90V
E52744
TMT Isolator
BR306
dioda switching
photo transistor til 78
F4183
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Phototransistor SFH 600-2
Abstract: No abstract text available
Text: SIEMENS SFH600 SERIES TRIOS ' PHOTOTRANSISTOR OPTOCOUPLER • • • • • • • Package Dimensions in Inches mm P in O n e ID t ^~]Base Anode ¡ X Cathode |~2~ jQCollector ncs: T 1 Emitter 335(8.50) 343(8.70} 3 0 0 (7 62) ^ iyp. € 1 B " ty p D E S C R IP T IO N
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E52744
SFH600
SFH600-0
SFH600-1
SFH600-2
8FH800-3
Phototransistor SFH 600-2
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ic 4060 pin diagram
Abstract: ic 4060 pin configuration diagram 4060 PIN DIAGRAM ic 4060 16 pin smd transistor rc1 4060 pin configuration diagram Siemens 4060 ic cd 4060 pin diagram TDE4060 ic 4060 of 16 pin pin diagram
Text: TDE 4060 TDE 4061 IR Preamplifiers Bipolar IC Type Ordering Code Package TDE 4060 Q 67000-A 8134 P-DIP-8 TDE 4060 G Q 67000-A 8135 sim ilar to P-DSO-8 SMD TDE 4061 Q 67000-A 8136 P-DIP-14 TDE 4061 G Q 67000-A 8137 P-DSO-14(SMD) Features • • • • •
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7000-A
P-DIP-14
P-DSO-14
ic 4060 pin diagram
ic 4060 pin configuration diagram
4060 PIN DIAGRAM
ic 4060 16 pin
smd transistor rc1
4060 pin configuration diagram
Siemens 4060
ic cd 4060 pin diagram
TDE4060
ic 4060 of 16 pin pin diagram
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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74LS82
Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p
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SAB16C450
Abstract: SAB 82C50P 82C50
Text: SAB 82C50/SAB16C450 Universal Asynchronous Receiver/Transmitter Preliminary • Easily interfaces to most popular microprocessors • Adds or deletes standard asynchronous communication bits start, stop, and parity to or from a serial data stream • Holding and shift registers eliminate the
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82C50/SAB16C450
82C50-P
Q67120-P282
P-DIP-40)
82C50-N
Q67120-P283
PL-CC-44)
16C450-P
Q67120-P284
SAB16C450
SAB 82C50P
82C50
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sab 16c450
Abstract: 82C50 s35j SAB16C450
Text: SAB 82C50/SAB16C450 Universal Asynchronous Receiver/Transmitter • Easily interfaces to most popular microprocessors • Adds or deletes standard asynchronous communication bits start, stop, and parity to or from a serial data stream • Holding and shift registers eliminate the
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82C50/SAB16C450
interfa2C50/SAB16C450
82C50/SAB16C450
sab 16c450
82C50
s35j
SAB16C450
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opto coupler siemens
Abstract: IC AL 6001
Text: C A P I T A L / OP TO 'D~"| ñ 2 3 b 3 a b G O G B B B S 7 j SIEM ENS D>Cy/-/3 SFH600 SERIES PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches mm 1 ? 3 4 5 6 ANODE CATHODE NOT CONNECTED EMITTER COLLECTOR B A SE M a x im u m R a tin g s FEATURES •
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SFH600
opto coupler siemens
IC AL 6001
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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74ls82
Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
Text: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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