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    SIC HIGH POWER MODULES Search Results

    SIC HIGH POWER MODULES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    SIC HIGH POWER MODULES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: Power Modules New Line of SiC-Based Power Modules for Universal Use in Solar and Battery Management Applications Second generation of SiC modules debuts flow 0 SiC Vincotech has rolled out new SiC-based products for ultra efficient, high-frequency operation in solar inverter and battery management


    Original     		PDF frequencie-PZ123BA080ME-M909L18Y Jan-14 12-mm com/M90

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTDC902U601G Single SiC Diode Power Module VRRM = 600V IF = 90A @ Tc = 80°C Application • • • • Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • SiC Schottky Diode Zero reverse recovery


    Original     		PDF APTDC902U601G

    Untitled

    Abstract: No abstract text available
    Text: APTDC902U1201G Single SiC Diode Power Module VRRM = 1200V IF = 90A @ Tc = 80°C Application • • • • Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • SiC Schottky Diode Zero reverse recovery


    Original     		PDF APTDC902U1201G

    Untitled

    Abstract: No abstract text available
    Text: APTDC902U601G Single SiC Diode Power Module VRRM = 600V IF = 90A @ Tc = 80°C Application •    Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features    SiC Schottky Diode Zero reverse recovery


    Original     		PDF APTDC902U601G

    APTES80DA120C3G

    Abstract: No abstract text available
    Text: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed


    Original     		PDF APTES80DA120C3G APTES80DA120C3G

    Untitled

    Abstract: No abstract text available
    Text: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed


    Original     		PDF APTES80DA120C3G

    APT0502

    Abstract: No abstract text available
    Text: APTDC10H1201G SiC Diode Full Bridge Power Module 3 VRRM = 1200V IF = 10A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10


    Original     		PDF APTDC10H1201G APT0502

    Untitled

    Abstract: No abstract text available
    Text: APTDC10H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 10A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR3 CR1 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •


    Original     		PDF APTDC10H601G isol00

    Untitled

    Abstract: No abstract text available
    Text: APTDC20H1201G SiC Diode Full Bridge Power Module 3 VRRM = 1200V IF = 20A @ Tc = 80°C 4 Application CR1 1 •    2 Features CR3 5 6 CR2 CR4 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers  7 8 - 9 10


    Original     		PDF APTDC20H1201G

    Untitled

    Abstract: No abstract text available
    Text: APTDC10H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 10A @ Tc = 80°C 4 Application CR1 1 •    2 Features CR3 5 6 CR2 CR4 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers  7 8 - 9 10 


    Original     		PDF APTDC10H601G

    APT0502

    Abstract: No abstract text available
    Text: APTDC30H1201G SiC Diode Full Bridge Power Module 3 VRRM = 1200V IF = 30A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10


    Original     		PDF APTDC30H1201G APT0502

    Untitled

    Abstract: No abstract text available
    Text: APTDC40H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 40A @ Tc = 80°C 4 Application CR1 1 •    2 Features CR3 5 6 CR2 CR4 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers  7 8 - 9 10 


    Original     		PDF APTDC40H601G

    Untitled

    Abstract: No abstract text available
    Text: APTDC10H1201G SiC Diode Full Bridge Power Module 3 VRRM = 1200V IF = 10A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR3 CR1 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10


    Original     		PDF APTDC10H1201G is600

    APT0502

    Abstract: No abstract text available
    Text: APTDC10H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 10A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •


    Original     		PDF APTDC10H601G APT0502