APTES80DA120C3G Search Results

Contextual Info: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed

APTES80DA120C3G

Contextual Info: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.