Untitled
Abstract: No abstract text available
Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
|
Original
|
Si9945DY
|
PDF
|
si9950
Abstract: Si9950DY Si9948DY SI9945 Si9945DY
Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT
|
Original
|
Si9950DY
Si9948DY
Si9945DY
SO-16
P-38889--Rev.
17-Oct-94
si9950
SI9945
|
PDF
|
SI9959DY
Abstract: SI9945 Si9945DY SI9959
Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET
|
Original
|
Si9959DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
SI9959
|
PDF
|
Si9959DY
Abstract: SI9945 Si9945DY A86V
Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET
|
Original
|
Si9959DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
A86V
|
PDF
|
Si9955DY Siliconix
Abstract: Si9945DY Si9955DY
Text: Si9955DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommend upgrade: Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 S1
|
Original
|
Si9955DY
Si9945DY
P38889Rev.
Si9955DY Siliconix
|
PDF
|
Si9959DY
Abstract: Si9945DY
Text: Si9959DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View
|
Original
|
Si9959DY
Si9945DY
S-42911--Rev.
|
PDF
|
SI9950DY
Abstract: si9950 6V25V SI9945 Si9948DY Si9945DY
Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT
|
Original
|
Si9950DY
Si9948DY
Si9945DY
SO-16
P-38889--Rev.
17-Oct-94
si9950
6V25V
SI9945
|
PDF
|
SI9945
Abstract: Si9945DY
Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
|
Original
|
Si9945DY
SI9945
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SI9945DY Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)3.3 I(DM) Max. (A) Pulsed I(D)2.6 @Temp (øC)70’ IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55
|
Original
|
SI9945DY
|
PDF
|
SI9955DY
Abstract: SI9945 Si9945DY
Text: Si9955DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommended upgrade: Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 N-Channel MOSFET
|
Original
|
Si9955DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
|
Original
|
Si9945DY
|
PDF
|
Si9959DY
Abstract: SI9945 Si9945DY
Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET
|
Original
|
Si9959DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
|
PDF
|
Si9955DY
Abstract: SI9945 Si9945DY
Text: Si9955DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommended upgrade: Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 N-Channel MOSFET
|
Original
|
Si9955DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
|
PDF
|
SI9945
Abstract: SI9955DY Si9945DY
Text: Si9955DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommended upgrade: Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 N-Channel MOSFET
|
Original
|
Si9955DY
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
|
PDF
|
|
|
Si9945DY
Abstract: No abstract text available
Text: Si9945DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.3 0.20 @ VGS = 4.5 V "2.5 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 NĆChannel MOSFET NĆChannel MOSFET
|
Original
|
Si9945DY
S-42910--Rev.
|
PDF
|
SI9945
Abstract: Si9945DY
Text: Si9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.3 0.20 @ VGS = 4.5 V "2.5 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
|
PDF
|
SI9945
Abstract: Si9945DY
Text: Si9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.3 0.20 @ VGS = 4.5 V "2.5 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si9945DY
S-47958--Rev.
15-Apr-96
SI9945
|
PDF
|
SI9950DY
Abstract: si9950 Si9948DY SI9945 Si9945DY 6V25V
Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT
|
Original
|
Si9950DY
Si9948DY
Si9945DY
SO-16
P-38889--Rev.
17-Oct-94
si9950
SI9945
6V25V
|
PDF
|
MAX232 G4
Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
Text: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9
|
Original
|
MPC555
TP102
TP103
CB100
TP100
TP101
CO101
MAX232-6
MAX232-2
MAX232-13
MAX232 G4
IC404
IC808
ic401
diode C728
diode c729
transistor C721
IC818
ic811
C729
|
PDF
|
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
|
Original
|
|
PDF
|
fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
|
Original
|
STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
|
PDF
|
S19955DY
Abstract: S19945
Text: T em ic AN709 S e m i c o n d u c t o r s Designing with the Si9976DY N-Channel Half-Bridge Driver and LITTLE FOOT Dual MOSFETs W harton M cDaniel Introduction Si9976DY Overview The Si9976DY is a fully integrated half-bridge driver 1C which was designed to work with the LITTLE FOOT
|
OCR Scan
|
AN709
Si9976DY
Si9959DY
Si9955DY
S19945
Si9940DY
SO-16,
S19955DY
S19945
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Tem ic Dual N-Channel Enhancement-Mode MOSFET Product Summary I d A 60 0.10 @ Vos = 10 V ±3.3 0.20 @ VGS = 4.5 V ±2.5 D i Di 0 2 D2 n SO-8 3i O h I Top View G i O . Ô Si Ô N-Channel M OSFET
|
OCR Scan
|
P-38889--
Si9945DY
|
PDF
|
AN603
Abstract: h bridge Controller PWM Temic Semiconductors acceleration Si9945DY "cross reference"
Text: Temic AN603 Semiconductors Designing With the SÌ9978DW Configurable H-Bridge Controller Currently, there are a number of fully integrated H*bridges on the market. Both bipolar and MOS technologies have been used to create these parts. However, all of them suffer from problems such as limited
|
OCR Scan
|
AN603
9978DW
Si9978DW
09-Nov-94
09-Nov-94
AN603
h bridge Controller PWM
Temic Semiconductors acceleration
Si9945DY "cross reference"
|
PDF
|
