SI9435BDY VISHAY Search Results

SI9435BDY-E3

Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1

Si9435BDY

Abstract: si9435bdy vishay
Contextual Info: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI9435BDY equivalent

Abstract: Si9435BDY DIODE B-10
Contextual Info: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

mar 808

Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9435BDY

Abstract: si9435bdy vishay 7233-5
Contextual Info: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si9435bdy vishay

Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9435BDY-T1-GE3

Abstract: Si9435BDY Si9435BDY-T1-E3 si9435bdy vishay
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si9435bdy vishay

Abstract: 72245
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D

Si9435BDY

Abstract: Si9435BDY-T1-E3 Si9435BDY-T1-GE3
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9435BDY

Abstract: Si9435BDY-T1
Contextual Info: Si9435BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2

SI9435BDY-E3

Abstract: Si9435BDY Si9435BDY-T1
Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D

si9435bdy vishay

Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D

Contextual Info: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si9435BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = - 10 V - 5.7 0.055 @ VGS = - 6 V - 5.0 0.070 @ VGS = - 4.5 V - 4.4 - 30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .