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    SI8824EDB Price and Stock

    Vishay Siliconix SI8824EDB-T2-E1

    MOSFET N-CH 20V 2.1A MICROFOOT
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    DigiKey SI8824EDB-T2-E1 Digi-Reel 15,092 1
    • 1 $0.54
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    SI8824EDB-T2-E1 Cut Tape 15,092 1
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    SI8824EDB-T2-E1 Reel 3,000 3,000
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    Vishay Intertechnologies SI8824EDB-T2-E1

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8824EDB-T2-E1)
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    Avnet Americas SI8824EDB-T2-E1 Reel 10 Weeks 6,000
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    Mouser Electronics SI8824EDB-T2-E1 19,258
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    Newark SI8824EDB-T2-E1 Cut Tape 3,405 5
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    SI8824EDB-T2-E1 Reel 6,000
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    TTI SI8824EDB-T2-E1 Reel 6,000 3,000
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    EBV Elektronik SI8824EDB-T2-E1 11 Weeks 3,000
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    Vishay Intertechnologies SI8824EDBT2E1

    N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ; ECCN: EAR99
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    ComSIT USA SI8824EDBT2E1 3,000
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    SI8824EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8824EDB-T2-E1 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.1A MICROFOOT Original PDF

    SI8824EDB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si8824EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8824EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si8824EDB AN609, 9497u 8190u 0736m 9485u 7900m 8017m 4353m 03-Sep-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.075 at VGS = 4.5 V 2.9 0.082 at VGS = 2.5 V 2.7 0.090 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 0.175 at VGS = 1.2 V 1.5 VDS (V) 20


    Original     		Si8824EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / June 2015 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com Vishay Si8824EDB Chipscale N-Channel MOSFET Features Industry-Low RDS ON for 20 V Devices With 1 mm2 or < 0.7 mm2 Outlines in Ratings Down to 1.2 V


    Original     		Si8824EDB PDF