SI7981DP Search Results

SI7981DP Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7981DP		Vishay Siliconix	MOSFETs		Original	PDF
Si7981DP SPICE Device Model		Vishay	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF

SI7981DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3161 Abstract: Si7981DP Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package	Original	Si7981DP 07-mm Si7981DP-T1 S-31611--Rev. 11-Aug-03 3161	PDF
72508 Abstract: Si7981DP Text: SPICE Device Model Si7981DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7981DP 03-Sep-03 72508	PDF
3161 Abstract: Si7981DP Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package	Original	Si7981DP 07-mm Si7981DP-T1 18-Jul-08 3161	PDF
Untitled Abstract: No abstract text available Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package	Original	Si7981DP 07-mm Si7981DP-T1 08-Apr-05	PDF