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    SI7820 Price and Stock

    Vishay Siliconix SI7820DN-T1-GE3

    MOSFET N-CH 200V 1.7A PPAK1212-8
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    DigiKey SI7820DN-T1-GE3 Cut Tape 8,168 1
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    SI7820DN-T1-GE3 Digi-Reel 8,168 1
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    SI7820DN-T1-GE3 Reel 3,000 3,000
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    ES Components SI7820DN-T1-GE3
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    Vishay Siliconix SI7820DN-T1-E3

    MOSFET N-CH 200V 1.7A PPAK1212-8
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    DigiKey SI7820DN-T1-E3 Cut Tape 6,068 1
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    SI7820DN-T1-E3 Digi-Reel 6,068 1
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    SI7820DN-T1-E3 Reel 3,000 3,000
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    ES Components SI7820DN-T1-E3
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    Vishay Intertechnologies SI7820DN-T1-E3

    Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7820DN-T1-E3)
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    Avnet Americas SI7820DN-T1-E3 Reel 3,000 13 Weeks 3,000
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    Mouser Electronics SI7820DN-T1-E3 4,555
    • 1 $2.1
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    Newark SI7820DN-T1-E3 Cut Tape 3,000
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    SI7820DN-T1-E3 Reel 3,000
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    Bristol Electronics SI7820DN-T1-E3 7,349
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    TTI SI7820DN-T1-E3 Reel 6,000 3,000
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    EBV Elektronik SI7820DN-T1-E3 14 Weeks 3,000
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    Vishay Intertechnologies SI7820DN-T1-GE3

    Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7820DN-T1-GE3)
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    Avnet Americas SI7820DN-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SI7820DN-T1-GE3 21,859
    • 1 $1.97
    • 10 $1.39
    • 100 $1.09
    • 1000 $0.848
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    Verical SI7820DN-T1-GE3 2,153 8
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    • 1000 $0.7865
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    Arrow Electronics SI7820DN-T1-GE3 Cut Strips 2,153 13 Weeks 1
    • 1 $1.05
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    Newark SI7820DN-T1-GE3 Cut Tape 3,000
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    TTI SI7820DN-T1-GE3 Reel 3,000
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    EBV Elektronik SI7820DN-T1-GE3 14 Weeks 3,000
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    Vishay Intertechnologies SI7820DN-TI-E3

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    Bristol Electronics SI7820DN-TI-E3 743
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    Find more SI7820 price and stock on Findchips.com

    SI7820 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7820DN Vishay Siliconix MOSFETs Original PDF
    Si7820DN SPICE Device Model Vishay N-Channel 200-V (D-S) MOSFET Original PDF
    SI7820DN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 1212-8 Original PDF
    Si7820DN-T1-E3 Vishay Telefunken Original PDF
    SI7820DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 1212-8 Original PDF

    SI7820 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S12-1319

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7820DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-1319 PDF

    TSOP8

    Abstract: si7401
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP8 si7401 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: REFERENCES FIXED Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies


    Original     		Si7820DN Si7820DN-T1--E3 S-51129--Rev. 13-Jun-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7820DN

    Abstract: Si7820DN-T1
    Text: Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies


    Original     		Si7820DN Si7820DN-T1--E3 08-Apr-05 Si7820DN-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200


    Original     		Si7820DN Si7820DN-T1 S-32269--Rev. 03-Nov-03 PDF

    Si7820DN

    Abstract: Si7820DN-T1
    Text: Si7820DN Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200


    Original     		Si7820DN Si7820DN-T1--E3 S-32411--Rev. 24-Nov-03 Si7820DN-T1 PDF

    SI7820

    Abstract: AN609 Si7820DN 73841
    Text: Si7820DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7820DN AN609 03-Mar-06 SI7820 73841 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7820DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7820DN

    Abstract: Si7820DN-T1-E3 Si7820DN-T1-GE3
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 11-Mar-11 PDF

    Si7820DN

    Abstract: Si7820DN SPICE Device Model
    Text: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7820DN S-60245Rev. 20-Feb-06 Si7820DN SPICE Device Model PDF

    Si7820DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7820DN 0-to-10V 30-Nov-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies


    Original     		Si7820DN Si7820DN-T1--E3 S-51129--Rev. 13-Jun-05 PDF

    Si7820DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7820DN 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    cs 740 mosfet

    Abstract: No abstract text available
    Text: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features ► 360VPP output voltage for high brightness ► Large output load capability of up to 150nF ► 2.7 to 5.5V operating supply voltage ► Single lithium ion cell compatible ► Adjustable output regulation for dimming


    Original     		360VPP 150nF 16-Lead HV816 HV816 DSFP-HV816 A120210 cs 740 mosfet PDF

    tsc4429

    Abstract: TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174
    Text: Code Key: PU – PP – FE – SP – Plug-In Upgrade Pin-for-Pin Compatible Functional Equivalent Similar Part AMCC MAXIM S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 S3040 S3043 S3044 S3047 S3049 S3050 MAX3690 MAX3680 MAX3690 MAX3675 MAX3675


    Original     		S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 tsc4429 TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174 PDF

    marking code E5 SMD ic sot23-5

    Abstract: Satellite DISEQC SWITCH 4x1 acer laptop motherboard circuit diagram acer laptop battery pinout nec tokin oe 128 schematic LG TV lcd backlight inverter ACER laptop schematic diagram HP COMPAQ MOTHERBOARD CIRCUIT diagram schematic acer lcd backlight inverter APC 5kv UPS CIRCUIT DIAGRAM
    Text: We hope that you will find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. To the left, please find a menu of the documents contained on this CD-ROM. Click on each item for a more detailed list. All of the indexes, tables, and trees on this CD-ROM contain links to product data sheets. After you have viewed a


    Original     		MAX038 MAX038EVKIT 2001elec marking code E5 SMD ic sot23-5 Satellite DISEQC SWITCH 4x1 acer laptop motherboard circuit diagram acer laptop battery pinout nec tokin oe 128 schematic LG TV lcd backlight inverter ACER laptop schematic diagram HP COMPAQ MOTHERBOARD CIRCUIT diagram schematic acer lcd backlight inverter APC 5kv UPS CIRCUIT DIAGRAM PDF

    toshiba laptop schematic diagram

    Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
    Text: Welcome to the Maxim Full-Line Data Catalog. We hope you find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. This CD-ROM contains: The Maxim Full-Line Data Catalog The menu to the left of this page lists the available documents. Use the small


    Original     		PDF

    DIP4NS

    Abstract: BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G
    Text: 1.0 Design Specifications Inputs Output #1 VinMin=80V Vout1=LED dependant, up to 32V VinMax=135V Iout1=0.6A A bill of materials below describes the parts used on this demonstration board. A schematic and layout have also been included below along with measured performance characteristics. The above restrictions for the input voltage are valid


    Original     		LM3445 CSP-9-111S2) CSP-9-111S2. RD-172 DIP4NS BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G PDF

    HV816

    Abstract: DIMMABLE HV816SG-G 80nf DR1030 Si7820DN
    Text: Product Summary Sheet HV816 High Voltage, Dimmable EL Lamp Driver VIN CIN 47µF Applications: Laptop keyboards Netbook keyboards Display signs Portable instrumentation equipment ► Electronic organizers LX = 22µH Cooper DR1030-220-R CG 0.1µF ► ► ►


    Original     		HV816 DR1030-220-R) Si7820DN 100nF 16-Lead HV816 DIMMABLE HV816SG-G 80nf DR1030 PDF

    cs 740 mosfet

    Abstract: HV816 HV816SG-G DR1030 H816 MO-220 Si7820DN MOSFET "MARKING CODE 7V"
    Text: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features ► 360VPP output voltage for high brightness ► Large output load capability of up to 150nF ► 2.7 to 5.5V operating supply voltage ► Single lithium ion cell compatible ► Adjustable output regulation for dimming


    Original     		HV816 360VPP 150nF 16-Lead HV816 DSFP-HV816 A010511 cs 740 mosfet HV816SG-G DR1030 H816 MO-220 Si7820DN MOSFET "MARKING CODE 7V" PDF