c4927
Abstract: si7732
Text: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
|
Original
|
Si7732DP
Si7732DP-T1-E3
34trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
c4927
si7732
|
PDF
|
69814
Abstract: C4927
Text: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
|
Original
|
Si7732DP
Si7732DP-T1-E3
34hay
11-Mar-11
69814
C4927
|
PDF
|
S-80732
Abstract: No abstract text available
Text: SPICE Device Model Si7732DP Vishay Siliconix N-Channel 20V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7732DP
18-Jul-08
S-80732
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
|
Original
|
Si7732DP
Si7732DP-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
|
Original
|
Si7732DP
Si7732DP-T1-E3
18-Jul-08
|
PDF
|
9412 transistor
Abstract: 9412 transistor pdf datasheet AN609
Text: Si7732DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si7732DP
AN609
12-Dec-07
9412 transistor
9412 transistor pdf datasheet
|
PDF
|