SI6924EDQ Search Results

SI6924EDQ Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI6924EDQ		Vishay Siliconix	N-Channel 2.5-V (G-S) Battery Switch, ESD Protection		Original	PDF
Si6924EDQ SPICE Device Model		Vishay	Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected		Original	PDF

SI6924EDQ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si6924EDQ Abstract: No abstract text available Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si6924EDQ 23-May-04	PDF
Si6924EDQ Abstract: MOSFET TSSOP-8 dual n-channel Text: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS	Original	Si6924EDQ S-59522--Rev. 30-Nov-98 MOSFET TSSOP-8 dual n-channel	PDF
Untitled Abstract: No abstract text available Text: Si6924EDQ Siliconix Dual N-Ch 2.5-V G-S MOSFET, Common Drain New Product PRODUCT SUMMARY VDS (V) 28 RDS(ON) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 ESD Protected 2000 V TSSOP-8 1 8 D 1.8 kW 7 S2 3 6 S2 4 5 G2	Original	Si6924EDQ 10-Aug-98	PDF
Si6924EDQ Abstract: Si6924AEDQ Si6924AEDQ-T1 Text: Specification Comparison Vishay Siliconix Si6924AEDQ vs. Si6924EDQ Description: N-Channel, 2.5 V G-S Battery Switch with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6924AEDQ-T1 Replaces Si6924EDQ-T1 Si6924AEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6924EDQ-T1	Original	Si6924AEDQ Si6924EDQ Si6924AEDQ-T1 Si6924EDQ-T1 Si6924AEDQ-T1-E3 09-Nov-06	PDF
Si6924EDQ Abstract: No abstract text available Text: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS	Original	Si6924EDQ 18-Jul-08	PDF
Si6924EDQ Abstract: No abstract text available Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si6924EDQ 18-Jul-08	PDF
Si6924EDQ Abstract: No abstract text available Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si6924EDQ 22-Aug-02	PDF
Untitled Abstract: No abstract text available Text: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS	Original	Si6924EDQ 08-Apr-05	PDF