SI5513 Search Results

SI5513 Price and Stock

Filter by Manufacturer


Vishay Siliconix SI5513CDC-T1-GE3 MOSFET N/P-CH 20V 4A/3.7A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5513CDC-T1-GE3	Digi-Reel	8,100		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-GE3	Cut Tape	8,100		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21265	Buy Now
Quest Components	SI5513CDC-T1-GE3		72			1 $0.525 10 $0.525 100 $0.2625 1000 $0.2625 10000 $0.2625	Buy Now
Vishay Siliconix SI5513CDC-T1-E3 MOSFET N/P-CH 20V 4A/3.7A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5513CDC-T1-E3	Digi-Reel	5,386		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-E3	Cut Tape	5,386		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-E3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21265	Buy Now
Vishay Siliconix SI5513DC-T1-E3 MOSFET N/P-CH 20V 3.1A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5513DC-T1-E3	Digi-Reel			1	1 $1.07 10 $1.07 100 $1.07 1000 $1.07 10000 $1.07	Buy Now
	SI5513DC-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI5513DC-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI5513DC-T1-GE3 MOSFET N/P-CH 20V 3.1A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5513DC-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI5513CDC-T1-E3 Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5513CDC-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI5513CDC-T1-E3	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.16605	Buy Now
Mouser Electronics	SI5513CDC-T1-E3		3,244			1 $0.63 10 $0.538 100 $0.357 1000 $0.243 10000 $0.193	Buy Now
Newark	SI5513CDC-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.189	Buy Now
TTI	SI5513CDC-T1-E3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.186	Buy Now
EBV Elektronik	SI5513CDC-T1-E3		3,000	22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	SI5513CDC-T1-E3		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.3403	Buy Now

Find more SI5513 price and stock on Findchips.com

SI5513 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
SI5513CDC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8	Original	PDF
SI5513CDC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8	Original	PDF
Si5513DC	Vishay Intertechnology	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5513DC	Vishay Siliconix	MOSFETs	Original	PDF
Si5513DC SPICE Device Model	Vishay	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5513DC-T1	Vishay Intertechnology	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5513DC-T1	Vishay Telefunken		Original	PDF
SI5513DC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8	Original	PDF
SI5513DC-T1-E3	Vishay Telefunken		Original	PDF
SI5513DC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8	Original	PDF

SI5513 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si5513DC Abstract: Si5513DC-T1-E3 Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11
AN609 Abstract: Si5513CDC Text: Si5513CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	Si5513CDC AN609, 23-Jul-08 AN609
Untitled Abstract: No abstract text available Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si5513DC Abstract: No abstract text available Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5513DC S-60074Rev. 23-Jan-06
Untitled Abstract: No abstract text available Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1	Original	PDF	Si5513DC Si5513DC-T1 S-31263--Rev. 16-Jun-03
Si5513DC Abstract: Si5513DC-T1-E3 Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08
mosfet 3047 Abstract: AN609 Si5513DC Text: Si5513DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si5513DC AN609 21-Jun-07 mosfet 3047
Si5513CDC-T1-E3 Abstract: Si5513CDC 82490 Text: Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC Si5513CDC-T1-E3 18-Jul-08 82490
Untitled Abstract: No abstract text available Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC 2002/95/EC Si5513CDC-T1-E3 Si5513CDC-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC 2002/95/EC Si5513CDC-T1-E3 Si5513CDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si5513CDC Abstract: No abstract text available Text: SPICE Device Model Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	Si5513CDC 18-Jul-08
Untitled Abstract: No abstract text available Text: SPICE Device Model Si5513CDC www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si5513CDC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

Si5513DC Abstract: Si5513DC-T1 Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1	Original	PDF	Si5513DC Si5513DC-T1 S-31263--Rev. 16-Jun-03
Si5513DC Abstract: No abstract text available Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5513DC 16-Apr-01
Si5513DC Abstract: Si5513DC-T1 Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel -20 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = -4.5 V -2.9 0.260 @ VGS = -2.5 V -2.2	Original	PDF	Si5513DC Si5513DC-T1 S-21251--Rev. 05-Aug-02
Si5513DC Abstract: Si5513DC-T1 Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2	Original	PDF	Si5513DC Si5513DC-T1 Si5513DC-T1--E3 08-Apr-05
Si5513CDC Abstract: Si5513CDC-T1-E3 S10-0547-Rev Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC 2002/95/EC 18-Jul-08 Si5513CDC-T1-E3 S10-0547-Rev
mosfet vgs 5v Abstract: Si5513DC Text: SPICE Device Model Si5513DC Complementary 20-V D-S MOSFET Characteristics • N- and P- channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	PDF	Si5513DC mosfet vgs 5v
Untitled Abstract: No abstract text available Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si5513CDC Abstract: transistor mosfet n-ch drain current Si5513CDC-T1-E3 Si5513DC Si5513DC-T1 Si5513DC-T1-E3 Text: Specification Comparison Vishay Siliconix Si5513CDC vs. Si5513DC Description: Package: Pin Out: N- and P-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5513CDC-T1-E3 replaces Si5513DC-T1 Si5513CDC-T1-E3 replaces Si5513DC-T1-E3	Original	PDF	Si5513CDC Si5513DC Si5513CDC-T1-E3 Si5513DC-T1 Si5513DC-T1-E3 04-Aug-08 transistor mosfet n-ch drain current
Si5513DC Abstract: No abstract text available Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5513DC 18-Jul-08
42138 Abstract: Si5513DC Si5513DC-T1 Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2	Original	PDF	Si5513DC Si5513DC-T1 Si5513DC-T1--E3 18-Jul-08 42138

Privacy Settings

SI5513 Search Results

SI5513 Price and Stock

Vishay Siliconix SI5513CDC-T1-GE3

Vishay Siliconix SI5513CDC-T1-E3

Vishay Siliconix SI5513DC-T1-E3

Vishay Siliconix SI5513DC-T1-GE3

Vishay Intertechnologies SI5513CDC-T1-E3

SI5513 Datasheets (10)

SI5513 Datasheets Context Search

Si5513DC

Untitled

AN609

Untitled

Si5513DC

Untitled

Si5513DC

mosfet 3047

Si5513CDC-T1-E3

Untitled

Untitled

Untitled

Si5513CDC

Untitled

Si5513DC

Si5513DC

Si5513DC

Si5513DC

Si5513CDC

mosfet vgs 5v

Untitled

Si5513CDC

Si5513DC

42138