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Vishay Siliconix SI5515CDC-T1-GE3 MOSFET N/P-CH 20V 4A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5515CDC-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3076	Buy Now
Vishay Siliconix SI5513CDC-T1-GE3 MOSFET N/P-CH 20V 4A/3.7A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5513CDC-T1-GE3	Cut Tape	8,100		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-GE3	Digi-Reel	8,100		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21265	Buy Now
Quest Components	SI5513CDC-T1-GE3		72			1 $0.525 10 $0.525 100 $0.2625 1000 $0.2625 10000 $0.2625	Buy Now
Vishay Siliconix SI5515CDC-T1-E3 MOSFET N/P-CH 20V 4A 1206-8
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DigiKey	SI5515CDC-T1-E3	Cut Tape	5,718		1	1 $1.21 10 $0.761 100 $1.21 1000 $0.35332 10000 $0.35332	Buy Now
	SI5515CDC-T1-E3	Digi-Reel	5,718		1	1 $1.21 10 $0.761 100 $1.21 1000 $0.35332 10000 $0.35332	Buy Now
	SI5515CDC-T1-E3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3076	Buy Now
Vishay Siliconix SI5513CDC-T1-E3 MOSFET N/P-CH 20V 4A/3.7A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5513CDC-T1-E3	Digi-Reel	5,386		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-E3	Cut Tape	5,386		1	1 $0.88 10 $0.55 100 $0.88 1000 $0.24674 10000 $0.24674	Buy Now
	SI5513CDC-T1-E3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21265	Buy Now
Vishay Siliconix SI5517DU-T1-GE3 MOSFET N/P-CH 20V 6A CHIPFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5517DU-T1-GE3	Cut Tape	1,422		1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
	SI5517DU-T1-GE3	Digi-Reel	1,422		1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
RS	SI5517DU-T1-GE3	Bulk			20	1 - 10 - 100 $0.71 1000 $0.64 10000 $0.6	Get Quote

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SI551 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
SI5511DC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8	Original	PDF
SI5511DC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8	Original	PDF
SI5513CDC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8	Original	PDF
SI5513CDC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8	Original	PDF
Si5513DC	Vishay Intertechnology	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5513DC	Vishay Siliconix	MOSFETs	Original	PDF
Si5513DC SPICE Device Model	Vishay	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5513DC-T1	Vishay Intertechnology	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5513DC-T1	Vishay Telefunken		Original	PDF
SI5513DC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8	Original	PDF
SI5513DC-T1-E3	Vishay Telefunken		Original	PDF
SI5513DC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8	Original	PDF
SI5515CDC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8	Original	PDF
SI5515CDC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8	Original	PDF

SI5515DC	Vishay Siliconix	Complementary 20-V (D-S) MOSFET	Original	PDF
Si5515DC-T1-E3	Vishay Siliconix	Complementary 20-V (D-S) MOSFET	Original	PDF
SI5515DC-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.4A 1206-8	Original	PDF
SI5515DC-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.4A 1206-8	Original	PDF
SI5517DU	Vishay Siliconix	N- and P-Channel 20-V (D-S) MOSFET	Original	PDF
SI5517DU-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6A CHIPFET	Original	PDF

SI551 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking code g1 Abstract: mil 43 Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V	Original	PDF	Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code g1 mil 43
Si5513DC Abstract: Si5513DC-T1-E3 Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11
74130 Abstract: data sheet 74130 455 ch p 78 Si5517DU Text: SPICE Device Model Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5517DU S-52018Rev. 03-Oct-05 74130 data sheet 74130 455 ch p 78
Untitled Abstract: No abstract text available Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V	Original	PDF	Si5515CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si5515CDC Abstract: 1206-8 chipfet Text: Si5515CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g 0.050 at VGS = 1.8 V g 4 • TrenchFET Power MOSFETs	Original	PDF	Si5515CDC Si5515CDC-T1-E3 18-Jul-08 1206-8 chipfet
Untitled Abstract: No abstract text available Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V	Original	PDF	Si5515DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V	Original	PDF	Si5515DC 2002/95/EC Si5515DC-T1-E3 11-Mar-11
AN609 Abstract: No abstract text available Text: Si5519DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si5519DU AN609 10-Oct-07
AN609 Abstract: Si5513CDC Text: Si5513CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	Si5513CDC AN609, 23-Jul-08 AN609
Si5515DC Abstract: No abstract text available Text: Si5515DC Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices	Original	PDF	Si5515DC 18-Jul-08
74009 Abstract: 4392 38544 AN609 Text: Si5511DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si5511DC AN609 02-Oct-07 74009 4392 38544
AN609 Abstract: Si5515DC Text: Si5515DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si5515DC AN609 21-Jun-07
Untitled Abstract: No abstract text available Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9	Original	PDF	Si5513CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

Untitled Abstract: No abstract text available Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)	Original	PDF	Si5519DU Si5519DU-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)	Original	PDF	Si5519DU Si5519DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si5513DC Abstract: No abstract text available Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5513DC S-60074Rev. 23-Jan-06
Untitled Abstract: No abstract text available Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1	Original	PDF	Si5513DC Si5513DC-T1 S-31263--Rev. 16-Jun-03
SI5515DC Abstract: No abstract text available Text: Si5515DC New Product Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = - 4.5 V - 4.1 D Load Switching for Portable Devices	Original	PDF	Si5515DC Si5515DC-T1 S-31407--Rev. 07-Jul-03
Untitled Abstract: No abstract text available Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V	Original	PDF	Si5515DC 2002/95/EC Si5515DC-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel	Original	PDF	Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si5513DC Abstract: Si5513DC-T1-E3 Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel	Original	PDF	Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)	Original	PDF	Si5519DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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Vishay Siliconix SI5515CDC-T1-GE3

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Vishay Siliconix SI5517DU-T1-GE3

SI551 Datasheets (22)

SI551 Datasheets Context Search

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Si5513DC

74130

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Si5515CDC

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AN609

AN609

Si5515DC

74009

AN609

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Si5513DC

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SI5515DC

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Si5513DC

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