Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI5479DU Search Results

    SF Impression Pixel

    SI5479DU Price and Stock

    Vishay Siliconix SI5479DU-T1-GE3

    MOSFET P-CH 12V 16A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5479DU-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.475
    		Buy Now

    Vishay Siliconix SI5479DUT1E3

    P-CHANNEL 12-V (D-S) MOSFET Power Field-Effect Transistor, 16A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI5479DUT1E3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SI5479DU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5479DU-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 16A CHIPFET Original PDF

    SI5479DU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU Si5479DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si5479

    Contextual Info: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr


    Original     		Si5479DU Si5479DU-T1--E3 S-50938--Rev. 08-May-05 si5479 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU 18-Jul-08 PDF

    4468

    Abstract: C 6090 transistor c 6090 AN609
    Contextual Info: Si5479DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5479DU AN609 20-Jun-07 4468 C 6090 transistor c 6090 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU 08-Apr-05 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU Si5479DU-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5479DU

    Contextual Info: SPICE Device Model Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5479DU 18-Jul-08 PDF

    Contextual Info: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr


    Original     		Si5479DU Si5479DU-T1--E3 08-Apr-05 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 PDF