Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI5415AEDU Search Results

    SF Impression Pixel

    SI5415AEDU Price and Stock

    Vishay Siliconix SI5415AEDU-T1-GE3

    MOSFET P-CH 20V 25A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5415AEDU-T1-GE3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI5415AEDU-T1-GE3 Digi-Reel 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
    		Buy Now
    SI5415AEDU-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SI5415AEDU-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI5415AEDU-T1-GE3 90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SI5415AEDU-T1-GE3 143 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Vyrian SI5415AEDU-T1-GE3 1,391
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies SI5415AEDUT1GE3

    P-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI5415AEDUT1GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SI5415AEDU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5415AEDU-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 25A CHIPFET Original PDF

    SI5415AEDU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single


    Original     		Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si542

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint


    Original     		Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF