SI5415AEDU Search Results
SI5415AEDU Price and Stock
Vishay Siliconix SI5415AEDU-T1-GE3MOSFET P-CH 20V 25A PPAK |
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SI5415AEDU-T1-GE3 | Reel |
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Vishay Intertechnologies SI5415AEDU-T1-GE3 |
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SI5415AEDU-T1-GE3 | 90 |
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SI5415AEDU-T1-GE3 | 143 Weeks | 3,000 |
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SI5415AEDU-T1-GE3 | 1,391 |
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Vishay Intertechnologies SI5415AEDUT1GE3P-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor |
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SI5415AEDUT1GE3 | 3,000 |
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SI5415AEDU Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| SI5415AEDU-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 25A CHIPFET | Original |
SI5415AEDU Datasheets Context Search
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Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single |
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Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single |
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Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single |
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Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single |
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Si5415AEDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si542Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint |
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Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of |
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SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 | |
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Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced, |
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1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 |