SI4866 Search Results

SI4866 Price and Stock

Filter by Manufacturer


Vishay Siliconix SI4866DY-T1-E3 MOSFET N-CH 12V 11A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4866DY-T1-E3	Digi-Reel	3,915		1	1 $2.93 10 $1.899 100 $2.93 1000 $0.97816 10000 $0.97816	Buy Now
	SI4866DY-T1-E3	Cut Tape	3,915		1	1 $2.93 10 $1.899 100 $2.93 1000 $0.97816 10000 $0.97816	Buy Now
	SI4866DY-T1-E3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.8875	Buy Now
RS	SI4866DY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $2.31	Get Quote
Quest Components	SI4866DY-T1-E3		576			1 $1.75 10 $1.75 100 $1.75 1000 $0.875 10000 $0.875	Buy Now
Vishay Siliconix SI4866DY-T1-GE3 MOSFET N-CH 12V 11A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4866DY-T1-GE3	Digi-Reel			1	1 $2.93 10 $1.899 100 $2.93 1000 $0.97816 10000 $0.97816	Buy Now
	SI4866DY-T1-GE3	Cut Tape			1	1 $2.93 10 $1.899 100 $2.93 1000 $0.97816 10000 $0.97816	Buy Now
	SI4866DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.8875	Buy Now
Vishay Siliconix SI4866BDY-T1-E3 MOSFET N-CH 12V 21.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4866BDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4866BDY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4866BDY-T1-E3	Digi-Reel			1	1 $1.2 10 $1.2 100 $1.2 1000 $1.2 10000 $1.2	Buy Now
Vishay Siliconix SI4866BDY-T1-GE3 MOSFET N-CH 12V 21.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4866BDY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	SI4866BDY-T1-GE3		19			1 $1.08 10 $0.9 100 $0.648 1000 $0.648 10000 $0.648	Buy Now
Vishay Intertechnologies SI4866DY-T1-GE3 Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4866DY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4866DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.85956	Buy Now

Find more SI4866 price and stock on Findchips.com

SI4866 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4866BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 21.5A 8-SOIC	Original	PDF
SI4866BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 21.5A 8-SOIC	Original	PDF
Si4866DY	Vishay Intertechnology	N-Channel Reduced Q g , Fast Switching MOSFET	Original	PDF
SI4866DY	Vishay Siliconix	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
Si4866DY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4866DY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 11A 8-SOIC	Original	PDF
SI4866DY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 11A 8-SOIC	Original	PDF

SI4866 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4866DY Abstract: Si4866DY-T1-E3 Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs	Original	PDF	Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available	Original	PDF	Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4866BDY Abstract: 71342 Text: New Product Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ) 29.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4866BDY Si4866BDY-T1-E3 08-Apr-05 71342
v5401 Abstract: Si4866BDY Text: SPICE Device Model Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4866BDY 18-Jul-08 v5401
Si4866BDY Abstract: No abstract text available Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available	Original	PDF	Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 18-Jul-08
dh 321 Abstract: ceramic capacitor capacitor 1000uf 12v capacitor 1000uf -36v bat54 EMK107BJ104MA MAX1954A bat 54 1R2 DIODE u1 321 Text: 3V to 3.6V VIN D1 BAT-54 C3 10uF 6V X5R 5 IN BST R1 68k C1 1.8nF 1 HSD 2 COMP U1 MAX1954A C2 180pF DH C5 820uF 6V MB-EXR 10 8 C6 22uF 6V L1 N1 X5R 1.2uH Si4866DY CDEP105-H C4 0.1uF 9 1.2V@7A VOUT LX DL PGND 4 GND FB 6 N2 Si4866DY 7 3 R2 5.11k R4 2.7 C8 1000uF	Original	PDF	BAT-54 MAX1954A 180pF 820uF Si4866DY CDEP105-H 1000uF 20MHz 60mVpp dh 321 ceramic capacitor capacitor 1000uf 12v capacitor 1000uf -36v bat54 EMK107BJ104MA MAX1954A bat 54 1R2 DIODE u1 321
Untitled Abstract: No abstract text available Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs	Original	PDF	Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs	Original	PDF	Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available	Original	PDF	Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available	Original	PDF	Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available	Original	PDF	Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
71719 Abstract: Si4866DY S-60245 17A67 Text: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4866DY S-60245Rev. 20-Feb-06 71719 S-60245 17A67
SI4866DY Abstract: SI4866DY-T1-E3 Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs	Original	PDF	Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 18-Jul-08
Si4866BDY Abstract: No abstract text available Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available	Original	PDF	Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 11-Mar-11

4742 Abstract: AN609 Si4866BDY Text: Si4866BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4866BDY AN609 03-May-07 4742
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4866BDY www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4866BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage	Original	PDF	Si4866DY 08-Apr-05
Si4866DY Abstract: No abstract text available Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Low Output Voltage PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V	Original	PDF	Si4866DY 02-Oct-01
74393 Abstract: v5401 Si4866BDY 74393 datasheet v.5401 5401 DM Text: SPICE Device Model Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4866BDY S-71564Rev. 30-Jul-07 74393 v5401 74393 datasheet v.5401 5401 DM
7361 Abstract: AN609 Si4866DY Text: Si4866DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4866DY AN609 02-Mar-06 7361
71719 Abstract: Si4866DY Text: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4866DY 18-Jul-08 71719
SI4866DY-T1-E3 Abstract: Si4866BDY si4866 SI4866DY RG52 Text: Specification Comparison Vishay Siliconix Si4866BDY vs. Si4866DY Description: Package: Pin Out: N-Channel, 12-V D-S MOSFET SO-8 Identical Part Number Replacements Si4866BDY-T1-E3 Replaces Si4866DY-T1-E3 Si4866BDY-T1-E3 Replaces Si4866DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	Si4866BDY Si4866DY Si4866BDY-T1-E3 Si4866DY-T1-E3 Si4866DY-T1 30-Aug-07 si4866 RG52
Si4866DY Abstract: No abstract text available Text: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage	Original	PDF	Si4866DY S-03662--Rev. 14-Apr-03
Untitled Abstract: No abstract text available Text: New Product Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • • • • TrenchFET Power MOSFETS PWM Optimized for High Efficiency	Original	PDF	Si4866DY Si4866DY-T1 Si4866DY-T1-E3 18-Jul-08

Privacy Settings

SI4866 Search Results

SI4866 Price and Stock

Vishay Siliconix SI4866DY-T1-E3

Vishay Siliconix SI4866DY-T1-GE3

Vishay Siliconix SI4866BDY-T1-E3

Vishay Siliconix SI4866BDY-T1-GE3

Vishay Intertechnologies SI4866DY-T1-GE3

SI4866 Datasheets (7)

SI4866 Datasheets Context Search

Si4866DY

Untitled

Si4866BDY

v5401

Si4866BDY

dh 321

Untitled

Untitled

Untitled

Untitled

Untitled

71719

SI4866DY

Si4866BDY

4742

Untitled

Untitled

Si4866DY

74393

7361

71719

SI4866DY-T1-E3

Si4866DY

Untitled