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    SI4638DY Price and Stock

    Vishay Intertechnologies SI4638DY-T1-E3

    MOSFETs 30V 22.4A 5.9W 6.5mohm @ 10V
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    Mouser Electronics SI4638DY-T1-E3
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    Vishay Intertechnologies SI4638DY-T1-GE3

    MOSFETs 30V 22.4A 5.9W 6.5mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI4638DY-T1-GE3
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.475
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    SI4638DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4638DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 22.4A 8SOIC Original PDF

    SI4638DY Datasheets Context Search

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    si4638

    Abstract: No abstract text available
    Text: New Product Si4638DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 22.4 0.008 at VGS = 4.5 V 20.2 VDS (V) 30 • SkyFET Monolithic TrenchFET Power MOSFET and Schottky Diode


    Original     		PDF Si4638DY Si4638DY-T1-E3 18-Jul-08 si4638

    7426 datasheet

    Abstract: 4046 4046 application note 7426 mosfet DATA SHEET 4046 simulation models 4046 AN609
    Text: Si4638DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4638DY AN609, 10-Jun-08 7426 datasheet 4046 4046 application note 7426 mosfet DATA SHEET 4046 simulation models 4046 AN609

    Si4638DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4638DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4638DY S-82172-Rev. 15-Sep-08 S-82172

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4638DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4638DY 18-Jul-08

    si4638

    Abstract: Si4638DY
    Text: New Product Si4638DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 22.4 0.008 at VGS = 4.5 V 20.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power


    Original     		PDF Si4638DY 2002/95/EC Si4638DY-T1-E3 Si4638DY-T1-GE3 18-Jul-08 si4638

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477